TY - JOUR
T1 - ZnO@ZIF-8 heteronanostructures for advanced neuromorphic synaptic devices
AU - Yeom, Chae Min
AU - Kumar, Deepak
AU - Eadi, Sunil Babu
AU - Lee, Hyeon Seung
AU - Thallapally, Praveen K.
AU - Kwon, Hyuk Min
AU - Fischer, Roland A.
AU - Lee, Hi Deok
AU - Jayaramulu, Kolleboyina
N1 - Publisher Copyright:
© 2024 The Author(s)
PY - 2024/10/16
Y1 - 2024/10/16
N2 - Metal-organic frameworks (MOFs) are promising materials for memristive synaptic devices due to their adaptable electrical properties and inherent porosity, which facilitate efficient ion transport and functional molecule storage. Here, we report MOFs from metabolites using ZnO as a self-sacrificial metallic source to grow zeolitic imidazolate framework-8 (ZIF-8), creating ZnO@ZIF-8 heteronanostructures for neuromorphic applications. These resultant synaptic devices exhibit superior electrical performance compared to ZnO single-layer devices, as demonstrated by current-voltage curve analysis and long-term potentiation/long-term depression (LTP/LTD) measurements. The bilayer devices achieve significantly improved endurance, reaching 200 cycles, and have a lower average set/reset voltage of 1.48/−0.59 V, indicating reduced power consumption. They also show an on/off ratio (HRS/LRS) of 44.54, with normalized SDs of 0.69, and nonlinearity in LTP and LTD of 0.58% and 0.30%, respectively, highlighting the ZIF-8 layer's crucial role in enhancing neuromorphic system performance and reliability.
AB - Metal-organic frameworks (MOFs) are promising materials for memristive synaptic devices due to their adaptable electrical properties and inherent porosity, which facilitate efficient ion transport and functional molecule storage. Here, we report MOFs from metabolites using ZnO as a self-sacrificial metallic source to grow zeolitic imidazolate framework-8 (ZIF-8), creating ZnO@ZIF-8 heteronanostructures for neuromorphic applications. These resultant synaptic devices exhibit superior electrical performance compared to ZnO single-layer devices, as demonstrated by current-voltage curve analysis and long-term potentiation/long-term depression (LTP/LTD) measurements. The bilayer devices achieve significantly improved endurance, reaching 200 cycles, and have a lower average set/reset voltage of 1.48/−0.59 V, indicating reduced power consumption. They also show an on/off ratio (HRS/LRS) of 44.54, with normalized SDs of 0.69, and nonlinearity in LTP and LTD of 0.58% and 0.30%, respectively, highlighting the ZIF-8 layer's crucial role in enhancing neuromorphic system performance and reliability.
KW - CMOS
KW - complementary metal oxide semiconductor
KW - heteronanostructures
KW - hybrid porous materials
KW - memristors
KW - metal-organic frameworks
KW - MOFs
KW - neuromorphic computing
KW - oxygen vacancy
KW - zeolite imidazole frameworks
KW - ZnO
UR - http://www.scopus.com/inward/record.url?scp=85207421796&partnerID=8YFLogxK
U2 - 10.1016/j.xcrp.2024.102219
DO - 10.1016/j.xcrp.2024.102219
M3 - Article
AN - SCOPUS:85207421796
SN - 2666-3864
VL - 5
JO - Cell Reports Physical Science
JF - Cell Reports Physical Science
IS - 10
M1 - 102219
ER -