Yield and reliability analysis of digital standard cells with resistive defects

M. Huber; Th Nirschl; J. Gstöttner; M. Heinitz; Th Zanon; W. Maly; D. Schmitt-Landsiedel

doi:10.1016/S0026-2714(00)00183-9

Yield and reliability analysis of digital standard cells with resistive defects

M. Huber
, Th Nirschl
, J. Gstöttner
, M. Heinitz
, Th Zanon
, W. Maly
, D. Schmitt-Landsiedel

Medicine and Health

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

New kinds of faults in digital ICs caused by particles with a certain resistance value are presented. By using an enhanced version of a three dimensional contamination-defect-fault simulator the faulty circuit behaviour caused by these defects and appropriate test strategies have been investigated. Moreover the dependence of failure probability on the defect size has been simulated and used to obtain a reliability estimate of the analysed ICs.

Original language	English
Pages (from-to)	1635-1640
Number of pages	6
Journal	Microelectronics Reliability
Volume	40
Issue number	8-10
DOIs	https://doi.org/10.1016/S0026-2714(00)00183-9
State	Published - 2000

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10.1016/S0026-2714(00)00183-9

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title = "Yield and reliability analysis of digital standard cells with resistive defects",

abstract = "New kinds of faults in digital ICs caused by particles with a certain resistance value are presented. By using an enhanced version of a three dimensional contamination-defect-fault simulator the faulty circuit behaviour caused by these defects and appropriate test strategies have been investigated. Moreover the dependence of failure probability on the defect size has been simulated and used to obtain a reliability estimate of the analysed ICs.",

author = "M. Huber and Th Nirschl and J. Gst{\"o}ttner and M. Heinitz and Th Zanon and W. Maly and D. Schmitt-Landsiedel",

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TY - JOUR

T1 - Yield and reliability analysis of digital standard cells with resistive defects

AU - Huber, M.

AU - Nirschl, Th

AU - Gstöttner, J.

AU - Heinitz, M.

AU - Zanon, Th

AU - Maly, W.

AU - Schmitt-Landsiedel, D.

PY - 2000

Y1 - 2000

N2 - New kinds of faults in digital ICs caused by particles with a certain resistance value are presented. By using an enhanced version of a three dimensional contamination-defect-fault simulator the faulty circuit behaviour caused by these defects and appropriate test strategies have been investigated. Moreover the dependence of failure probability on the defect size has been simulated and used to obtain a reliability estimate of the analysed ICs.

AB - New kinds of faults in digital ICs caused by particles with a certain resistance value are presented. By using an enhanced version of a three dimensional contamination-defect-fault simulator the faulty circuit behaviour caused by these defects and appropriate test strategies have been investigated. Moreover the dependence of failure probability on the defect size has been simulated and used to obtain a reliability estimate of the analysed ICs.

UR - https://www.scopus.com/pages/publications/0041967599

U2 - 10.1016/S0026-2714(00)00183-9

DO - 10.1016/S0026-2714(00)00183-9

M3 - Article

AN - SCOPUS:0041967599

SN - 0026-2714

VL - 40

SP - 1635

EP - 1640

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 8-10

ER -

Yield and reliability analysis of digital standard cells with resistive defects

Abstract

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