Yield analysis of CMOS ICs

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Abstract

The production yield of CMOS logic ICs in stable process technologies is limited by spot defects due to contaminations. In this paper, experimental results are presented on defect-related failures of SRAM monitor circuits, and simulation methods for failure analysis and yield modeling are introduced. - In analog CMOS circuits yield loss is mainly due to parametric failures, requiring careful investigations on device matching. - For low power low voltage CMOS logic, a high sensitivity to the statistical variation of the threshold voltage was found. This will get increasing importance for future technologies with reduced supply voltage.

Original languageEnglish
Pages (from-to)327-336
Number of pages10
JournalSolid State Phenomena
Volume57-58
DOIs
StatePublished - 1997

Keywords

  • Critical Area
  • Defect Density
  • Failure Analysis
  • Low Voltage CMOS
  • Manufacturability
  • Matching
  • Parameter Variations
  • Yield

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