Abstract
The production yield of CMOS logic ICs in stable process technologies is limited by spot defects due to contaminations. In this paper, experimental results are presented on defect-related failures of SRAM monitor circuits, and simulation methods for failure analysis and yield modeling are introduced. - In analog CMOS circuits yield loss is mainly due to parametric failures, requiring careful investigations on device matching. - For low power low voltage CMOS logic, a high sensitivity to the statistical variation of the threshold voltage was found. This will get increasing importance for future technologies with reduced supply voltage.
| Original language | English |
|---|---|
| Pages (from-to) | 327-336 |
| Number of pages | 10 |
| Journal | Solid State Phenomena |
| Volume | 57-58 |
| DOIs | |
| State | Published - 1997 |
Keywords
- Critical Area
- Defect Density
- Failure Analysis
- Low Voltage CMOS
- Manufacturability
- Matching
- Parameter Variations
- Yield