YBa2Cu3O7-δ films on GaAs with high critical current densities

W. Prusseit; B. Utz; S. Corsépius; F. Baudenbacher; K. Hirata; P. Berberich; H. Kinder; O. Eibl

doi:10.1016/0925-8388(93)90723-Z

YBa₂Cu₃O_7-δ films on GaAs with high critical current densities

W. Prusseit, B. Utz, S. Corsépius, F. Baudenbacher, K. Hirata, P. Berberich, H. Kinder, O. Eibl

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Abstract

Epitaxial YBa₂Cu₃O_7-δ films were grown on GaAs substrates using an intermediate MgO buffer layer. It turned out that the basic requirements in coping with GaAs related problems such as chemical instability and volatility are lowest possible deposition temperatures and proper encapsulation of bare GaAs faces, respectively. Applying our coevaporation technique we were able to achieve YBa₂Cu₃O_7-δ films on GaAs which can compete with those on standard substrates (T_c = 87 K, ρ(100 K) = 40μΩcm, j_c = 2 ·10⁶ A/cm² at 77 K).

Original language	English
Pages (from-to)	215-217
Number of pages	3
Journal	Journal of Alloys and Compounds
Volume	195
Issue number	C
DOIs	https://doi.org/10.1016/0925-8388(93)90723-Z
State	Published - 10 May 1993

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title = "YBa2Cu3O7-δ films on GaAs with high critical current densities",

abstract = "Epitaxial YBa2Cu3O7-δ films were grown on GaAs substrates using an intermediate MgO buffer layer. It turned out that the basic requirements in coping with GaAs related problems such as chemical instability and volatility are lowest possible deposition temperatures and proper encapsulation of bare GaAs faces, respectively. Applying our coevaporation technique we were able to achieve YBa2Cu3O7-δ films on GaAs which can compete with those on standard substrates (Tc = 87 K, ρ(100 K) = 40μΩcm, jc = 2 ·106 A/cm2 at 77 K).",

author = "W. Prusseit and B. Utz and S. Cors{\'e}pius and F. Baudenbacher and K. Hirata and P. Berberich and H. Kinder and O. Eibl",

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T1 - YBa2Cu3O7-δ films on GaAs with high critical current densities

AU - Prusseit, W.

AU - Utz, B.

AU - Corsépius, S.

AU - Baudenbacher, F.

AU - Hirata, K.

AU - Berberich, P.

AU - Kinder, H.

AU - Eibl, O.

PY - 1993/5/10

Y1 - 1993/5/10

N2 - Epitaxial YBa2Cu3O7-δ films were grown on GaAs substrates using an intermediate MgO buffer layer. It turned out that the basic requirements in coping with GaAs related problems such as chemical instability and volatility are lowest possible deposition temperatures and proper encapsulation of bare GaAs faces, respectively. Applying our coevaporation technique we were able to achieve YBa2Cu3O7-δ films on GaAs which can compete with those on standard substrates (Tc = 87 K, ρ(100 K) = 40μΩcm, jc = 2 ·106 A/cm2 at 77 K).

AB - Epitaxial YBa2Cu3O7-δ films were grown on GaAs substrates using an intermediate MgO buffer layer. It turned out that the basic requirements in coping with GaAs related problems such as chemical instability and volatility are lowest possible deposition temperatures and proper encapsulation of bare GaAs faces, respectively. Applying our coevaporation technique we were able to achieve YBa2Cu3O7-δ films on GaAs which can compete with those on standard substrates (Tc = 87 K, ρ(100 K) = 40μΩcm, jc = 2 ·106 A/cm2 at 77 K).

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SN - 0925-8388

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EP - 217

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

IS - C

ER -

YBa₂Cu₃O_7-δ films on GaAs with high critical current densities

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