X-ray study of the wetting behaviour of CCl4 on Si/SiO2 surfaces

P. Müller-Buschbaum, M. Tolan, W. Press

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10 Scopus citations


The complete wetting of an uncoated silicon wafer covered with a native oxide layer by saturated vapour of carbon tetrachloride was studied by using the x-ray reflectivity-technique. Differential heating of the substrate relative to a liquid reservoir was used to examine the disjoining pressure as a function of film thickness. The measurements were done at the temperatures T=308K and T=318K of the reservoir. The observed film thicknesses varied between 26Å and 345Å depending on the temperature difference. A model for explaining the measured film thickness as a function of the temperature difference in terms of van der Waals forces is presented. It is based on the non-retarded interaction and includes terms of higher order in the film thickness. Microscopic constants like the Hamaker constant were determined and compared with reported values.

Original languageEnglish
Pages (from-to)331-339
Number of pages9
JournalZeitschrift für Physik B Condensed Matter
Issue number3
StatePublished - Sep 1994
Externally publishedYes


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