X-ray reflectivity of self-assembled structures in SiGe multilayers and comparison with atomic force microscopy

M. Meduňa; V. Holý; T. Roch; J. Stangl; G. Bauer; J. Zhu; K. Brunner; G. Abstreiter

doi:10.1063/1.1359156

X-ray reflectivity of self-assembled structures in SiGe multilayers and comparison with atomic force microscopy

M. Meduňa, V. Holý, T. Roch, J. Stangl, G. Bauer, J. Zhu, K. Brunner, G. Abstreiter

Natural Sciences

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We have studied the interface morphology of SiGe/Si multilayers by means of specular and nonspecular x-ray reflectivity under grazing incidence. The samples were grown by molecular beam epitaxy on silicon substrates with (001) surface orientation and with different directions of the surface misorientation. X-ray reflectivity measurements in different azimuths are compared to data from atomic force microscopy, which are used to simulate the x-ray experiments. With this combination of experimental techniques we have determined the structural properties, in particular the ordering of different features present at the sample surface and inside the multilayer at the SiGe/Si layer interfaces.

Original language	English
Pages (from-to)	4836-4842
Number of pages	7
Journal	Journal of Applied Physics
Volume	89
Issue number	9
DOIs	https://doi.org/10.1063/1.1359156
State	Published - 1 May 2001

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abstract = "We have studied the interface morphology of SiGe/Si multilayers by means of specular and nonspecular x-ray reflectivity under grazing incidence. The samples were grown by molecular beam epitaxy on silicon substrates with (001) surface orientation and with different directions of the surface misorientation. X-ray reflectivity measurements in different azimuths are compared to data from atomic force microscopy, which are used to simulate the x-ray experiments. With this combination of experimental techniques we have determined the structural properties, in particular the ordering of different features present at the sample surface and inside the multilayer at the SiGe/Si layer interfaces.",

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AU - Meduňa, M.

AU - Holý, V.

AU - Roch, T.

AU - Stangl, J.

AU - Bauer, G.

AU - Zhu, J.

AU - Brunner, K.

AU - Abstreiter, G.

PY - 2001/5/1

Y1 - 2001/5/1

N2 - We have studied the interface morphology of SiGe/Si multilayers by means of specular and nonspecular x-ray reflectivity under grazing incidence. The samples were grown by molecular beam epitaxy on silicon substrates with (001) surface orientation and with different directions of the surface misorientation. X-ray reflectivity measurements in different azimuths are compared to data from atomic force microscopy, which are used to simulate the x-ray experiments. With this combination of experimental techniques we have determined the structural properties, in particular the ordering of different features present at the sample surface and inside the multilayer at the SiGe/Si layer interfaces.

AB - We have studied the interface morphology of SiGe/Si multilayers by means of specular and nonspecular x-ray reflectivity under grazing incidence. The samples were grown by molecular beam epitaxy on silicon substrates with (001) surface orientation and with different directions of the surface misorientation. X-ray reflectivity measurements in different azimuths are compared to data from atomic force microscopy, which are used to simulate the x-ray experiments. With this combination of experimental techniques we have determined the structural properties, in particular the ordering of different features present at the sample surface and inside the multilayer at the SiGe/Si layer interfaces.

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

ER -

X-ray reflectivity of self-assembled structures in SiGe multilayers and comparison with atomic force microscopy

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