X-ray reflectivity investigations of the interface morphology in strained SiGe/Si multilayers

V. Holý; A. A. Darhuber; J. Stangl; G. Bauer; J. Nützel; G. Abstreiter

doi:10.1088/0268-1242/13/6/009

X-ray reflectivity investigations of the interface morphology in strained SiGe/Si multilayers

V. Holý
, A. A. Darhuber
, J. Stangl
, G. Bauer
, J. Nützel
, G. Abstreiter

TUM Emeriti of Excellence

Masaryk University
Johannes Kepler University Linz
Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

We have studied the lateral and vertical correlation of the interface roughness of Si/SiGe multilayers grown on Si(001) substrates with a miscut between 0.2° and 0.5° using high resolution x-ray reflectivity. The theoretical analysis of the measurements proved that the established phenomenological models for the description of the interface profiles fail in the common case of moderately small miscut angles. We obtained qualitatively correct results for the roughness correlations using a microscopic kinetic step-flow growth model, which accounts for the aggregation of monolayer steps (step bunching) during the hetero-epitaxial growth.

Original language	English
Pages (from-to)	590-598
Number of pages	9
Journal	Semiconductor Science and Technology
Volume	13
Issue number	6
DOIs	https://doi.org/10.1088/0268-1242/13/6/009
State	Published - Jun 1998

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10.1088/0268-1242/13/6/009

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title = "X-ray reflectivity investigations of the interface morphology in strained SiGe/Si multilayers",

abstract = "We have studied the lateral and vertical correlation of the interface roughness of Si/SiGe multilayers grown on Si(001) substrates with a miscut between 0.2° and 0.5° using high resolution x-ray reflectivity. The theoretical analysis of the measurements proved that the established phenomenological models for the description of the interface profiles fail in the common case of moderately small miscut angles. We obtained qualitatively correct results for the roughness correlations using a microscopic kinetic step-flow growth model, which accounts for the aggregation of monolayer steps (step bunching) during the hetero-epitaxial growth.",

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T1 - X-ray reflectivity investigations of the interface morphology in strained SiGe/Si multilayers

AU - Holý, V.

AU - Darhuber, A. A.

AU - Stangl, J.

AU - Bauer, G.

AU - Nützel, J.

AU - Abstreiter, G.

PY - 1998/6

Y1 - 1998/6

N2 - We have studied the lateral and vertical correlation of the interface roughness of Si/SiGe multilayers grown on Si(001) substrates with a miscut between 0.2° and 0.5° using high resolution x-ray reflectivity. The theoretical analysis of the measurements proved that the established phenomenological models for the description of the interface profiles fail in the common case of moderately small miscut angles. We obtained qualitatively correct results for the roughness correlations using a microscopic kinetic step-flow growth model, which accounts for the aggregation of monolayer steps (step bunching) during the hetero-epitaxial growth.

AB - We have studied the lateral and vertical correlation of the interface roughness of Si/SiGe multilayers grown on Si(001) substrates with a miscut between 0.2° and 0.5° using high resolution x-ray reflectivity. The theoretical analysis of the measurements proved that the established phenomenological models for the description of the interface profiles fail in the common case of moderately small miscut angles. We obtained qualitatively correct results for the roughness correlations using a microscopic kinetic step-flow growth model, which accounts for the aggregation of monolayer steps (step bunching) during the hetero-epitaxial growth.

UR - https://www.scopus.com/pages/publications/0001113714

U2 - 10.1088/0268-1242/13/6/009

DO - 10.1088/0268-1242/13/6/009

M3 - Article

AN - SCOPUS:0001113714

SN - 0268-1242

VL - 13

SP - 590

EP - 598

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 6

ER -

X-ray reflectivity investigations of the interface morphology in strained SiGe/Si multilayers

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