Wavelength selective data storage in InGaAs-GaAs quantum dots

M. Kroutvar; A. Zrenner; Y. Ducommun; J. J. Finley; G. Abstreiter

doi:10.1002/pssb.200303089

Wavelength selective data storage in InGaAs-GaAs quantum dots

M. Kroutvar, A. Zrenner, Y. Ducommun, J. J. Finley, G. Abstreiter

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We present the first demonstration of wavelength selective charge storage (electrons or holes) in In_0.5Ga_0.5As self-assembled quantum dots with optical readout. Our results demonstrate unambiguously wavelength selective charging with long (≪25 μs) data storage lifetimes and enable us to probe directly carrier excitation processes and potentially electron spin dynamics in micro-ensembles of quantum dots.

Original language	English
Pages (from-to)	345-348
Number of pages	4
Journal	Physica Status Solidi (B) Basic Research
Volume	238
Issue number	2
DOIs	https://doi.org/10.1002/pssb.200303089
State	Published - Jul 2003

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abstract = "We present the first demonstration of wavelength selective charge storage (electrons or holes) in In0.5Ga0.5As self-assembled quantum dots with optical readout. Our results demonstrate unambiguously wavelength selective charging with long (≪25 μs) data storage lifetimes and enable us to probe directly carrier excitation processes and potentially electron spin dynamics in micro-ensembles of quantum dots.",

author = "M. Kroutvar and A. Zrenner and Y. Ducommun and Finley, {J. J.} and G. Abstreiter",

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AU - Kroutvar, M.

AU - Zrenner, A.

AU - Ducommun, Y.

AU - Finley, J. J.

AU - Abstreiter, G.

PY - 2003/7

Y1 - 2003/7

N2 - We present the first demonstration of wavelength selective charge storage (electrons or holes) in In0.5Ga0.5As self-assembled quantum dots with optical readout. Our results demonstrate unambiguously wavelength selective charging with long (≪25 μs) data storage lifetimes and enable us to probe directly carrier excitation processes and potentially electron spin dynamics in micro-ensembles of quantum dots.

AB - We present the first demonstration of wavelength selective charge storage (electrons or holes) in In0.5Ga0.5As self-assembled quantum dots with optical readout. Our results demonstrate unambiguously wavelength selective charging with long (≪25 μs) data storage lifetimes and enable us to probe directly carrier excitation processes and potentially electron spin dynamics in micro-ensembles of quantum dots.

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EP - 348

JO - Physica Status Solidi (B) Basic Research

JF - Physica Status Solidi (B) Basic Research

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Wavelength selective data storage in InGaAs-GaAs quantum dots

Abstract

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