Abstract
A study is performed on wavelength selective charge storage in self-assembled InGaAs/GaAs quantum dots. It is shown that the holes and electrons can be resonantly and efficiently stored without thermal redistribution of charge between dots over timescales much longer than 25 μs at 10 K. It is found that the maximum efficiency of the charge storage process is close to unity.
Original language | English |
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Pages (from-to) | 443-445 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 83 |
Issue number | 3 |
DOIs | |
State | Published - 21 Jul 2003 |