Wavelength dependence of efficiency limiting mechanisms in type i GaInAsSb/GaSb lasers emitting in the mid-infrared

Timothy Eales; Igor P. Marko; Barnabas A. Ikyo; Alf R. Adams; Shamsul Arafin; Stephan Sprengel; Markus C. Amann; Stephen J. Sweeney

Wavelength dependence of efficiency limiting mechanisms in type i GaInAsSb/GaSb lasers emitting in the mid-infrared

Timothy Eales, Igor P. Marko, Barnabas A. Ikyo, Alf R. Adams, Shamsul Arafin, Stephan Sprengel, Markus C. Amann, Stephen J. Sweeney

Chair of Semiconductor Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Type-I GaInAsSb lasers, emitting between 2-3 μm are investigated using temperature and high pressure characterization techniques. A model of the Auger processes is used to fit the non-radiative component of the threshold current at room temperature, identifying the dominance of different Auger losses across the wavelength range of operation.

Original language	English
Title of host publication	2016 International Semiconductor Laser Conference, ISLC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9784885523069
State	Published - 2 Dec 2016
Event	2016 International Semiconductor Laser Conference, ISLC 2016 - Kobe, Japan Duration: 12 Sep 2016 → 15 Sep 2016

Publication series

Name	Conference Digest - IEEE International Semiconductor Laser Conference
ISSN (Print)	0899-9406

Conference

Conference	2016 International Semiconductor Laser Conference, ISLC 2016
Country/Territory	Japan
City	Kobe
Period	12/09/16 → 15/09/16

Keywords

Auger recombination
Mid-infrared
Type-I Lasers
diode laser
quantum well
spin orbit split-off resonance

Cite this

Eales, T., Marko, I. P., Ikyo, B. A., Adams, A. R., Arafin, S., Sprengel, S., Amann, M. C., & Sweeney, S. J. (2016). Wavelength dependence of efficiency limiting mechanisms in type i GaInAsSb/GaSb lasers emitting in the mid-infrared. In 2016 International Semiconductor Laser Conference, ISLC 2016 Article 7765737 (Conference Digest - IEEE International Semiconductor Laser Conference). Institute of Electrical and Electronics Engineers Inc..

Eales, Timothy ; Marko, Igor P. ; Ikyo, Barnabas A. et al. / Wavelength dependence of efficiency limiting mechanisms in type i GaInAsSb/GaSb lasers emitting in the mid-infrared. 2016 International Semiconductor Laser Conference, ISLC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. (Conference Digest - IEEE International Semiconductor Laser Conference).

@inproceedings{740988f4fe31415bad7e21523d3ee909,

title = "Wavelength dependence of efficiency limiting mechanisms in type i GaInAsSb/GaSb lasers emitting in the mid-infrared",

abstract = "Type-I GaInAsSb lasers, emitting between 2-3 μm are investigated using temperature and high pressure characterization techniques. A model of the Auger processes is used to fit the non-radiative component of the threshold current at room temperature, identifying the dominance of different Auger losses across the wavelength range of operation.",

keywords = "Auger recombination, Mid-infrared, Type-I Lasers, diode laser, quantum well, spin orbit split-off resonance",

author = "Timothy Eales and Marko, {Igor P.} and Ikyo, {Barnabas A.} and Adams, {Alf R.} and Shamsul Arafin and Stephan Sprengel and Amann, {Markus C.} and Sweeney, {Stephen J.}",

note = "Publisher Copyright: {\textcopyright} 2016 IEICE-ES.; 2016 International Semiconductor Laser Conference, ISLC 2016 ; Conference date: 12-09-2016 Through 15-09-2016",

year = "2016",

month = dec,

day = "2",

language = "English",

series = "Conference Digest - IEEE International Semiconductor Laser Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2016 International Semiconductor Laser Conference, ISLC 2016",

}

Eales, T, Marko, IP, Ikyo, BA, Adams, AR, Arafin, S, Sprengel, S, Amann, MC & Sweeney, SJ 2016, Wavelength dependence of efficiency limiting mechanisms in type i GaInAsSb/GaSb lasers emitting in the mid-infrared. in 2016 International Semiconductor Laser Conference, ISLC 2016., 7765737, Conference Digest - IEEE International Semiconductor Laser Conference, Institute of Electrical and Electronics Engineers Inc., 2016 International Semiconductor Laser Conference, ISLC 2016, Kobe, Japan, 12/09/16.

Wavelength dependence of efficiency limiting mechanisms in type i GaInAsSb/GaSb lasers emitting in the mid-infrared. / Eales, Timothy; Marko, Igor P.; Ikyo, Barnabas A. et al.
2016 International Semiconductor Laser Conference, ISLC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7765737 (Conference Digest - IEEE International Semiconductor Laser Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Wavelength dependence of efficiency limiting mechanisms in type i GaInAsSb/GaSb lasers emitting in the mid-infrared

AU - Eales, Timothy

AU - Marko, Igor P.

AU - Ikyo, Barnabas A.

AU - Adams, Alf R.

AU - Arafin, Shamsul

AU - Sprengel, Stephan

AU - Amann, Markus C.

AU - Sweeney, Stephen J.

PY - 2016/12/2

Y1 - 2016/12/2

N2 - Type-I GaInAsSb lasers, emitting between 2-3 μm are investigated using temperature and high pressure characterization techniques. A model of the Auger processes is used to fit the non-radiative component of the threshold current at room temperature, identifying the dominance of different Auger losses across the wavelength range of operation.

AB - Type-I GaInAsSb lasers, emitting between 2-3 μm are investigated using temperature and high pressure characterization techniques. A model of the Auger processes is used to fit the non-radiative component of the threshold current at room temperature, identifying the dominance of different Auger losses across the wavelength range of operation.

KW - Auger recombination

KW - Mid-infrared

KW - Type-I Lasers

KW - diode laser

KW - quantum well

KW - spin orbit split-off resonance

UR - http://www.scopus.com/inward/record.url?scp=85014278260&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:85014278260

T3 - Conference Digest - IEEE International Semiconductor Laser Conference

BT - 2016 International Semiconductor Laser Conference, ISLC 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2016 International Semiconductor Laser Conference, ISLC 2016

Y2 - 12 September 2016 through 15 September 2016

ER -

Eales T, Marko IP, Ikyo BA, Adams AR, Arafin S, Sprengel S et al. Wavelength dependence of efficiency limiting mechanisms in type i GaInAsSb/GaSb lasers emitting in the mid-infrared. In 2016 International Semiconductor Laser Conference, ISLC 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7765737. (Conference Digest - IEEE International Semiconductor Laser Conference).

Wavelength dependence of efficiency limiting mechanisms in type i GaInAsSb/GaSb lasers emitting in the mid-infrared

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