Abstract
We investigate coupling phenomena in quantum point contacts (QPCs) where a particularly strong lateral confinement leads to large separations of the one-dimensional (1D) subbands (above 10 meV). Closely spaced vertically stacked QPCs were defined by atomic-force-microscope nanolithography and wet-chemical etching on a GaAs/AlGaAs double-quantum-well heterostructure with a two-dimensional symmetric-antisymmetric energy gap of 4 meV. Top-gate and back-gate voltage variation in combination with a cooling bias technique was used for tuning the energy spectra of the tunnel-coupled QPCs in order to obtain degeneracies of 1D subbands. We observed clear anticrossings caused by mixing of the 1D wave-functions in grey-scale transconductance plots versus top-gate and back-gate voltage at 4.2 K.
| Original language | English |
|---|---|
| Pages (from-to) | 526-529 |
| Number of pages | 4 |
| Journal | Physica E: Low-Dimensional Systems and Nanostructures |
| Volume | 34 |
| Issue number | 1-2 |
| DOIs | |
| State | Published - Aug 2006 |
Keywords
- 1D transport
- 1D-1D coupling
- Double-quantum-well heterostructure
- Quantum point contact
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