Voltage-controlled sharp-line electroluminescence in GaAs-AlAs double-barrier resonant-tunneling structures

Highly resolved, acceptor-related sharp-line electroluminescence spectra in large area GaAs-AlAs double-barrier resonant-tunneling structures are reported. Excitation of the lines is achieved by voltage-controlled tunneling in the bias range for tunneling into the lowest heavy-hole state of the quantum well of the double-barrier structure. The sharp-line spectra are observed at low levels of current injection and are attributed to recombination of holes localized at acceptors at different monolayer planes in the 66-Å-wide quantum well, from well center to well edge, with electrons localized at potential fluctuations within the well.