Volatile single-source precursors for the mocvd of metal silicate thin films

Urmila Patil; Hans Werner Becker; Manuela Winter; Roland A. Fischer; Anjana Devi

Volatile single-source precursors for the mocvd of metal silicate thin films

Urmila Patil, Hans Werner Becker, Manuela Winter, Roland A. Fischer, Anjana Devi

Max-Planck-lnstitut für Kohlenforschung

Research output: Contribution to conference › Paper › peer-review

Abstract

The synthesis and characterisation of two novel complexes namely zirconium bis(trimethylsilinolate)bis(tert-butylacetoacetate) (1) and hafnium bis(trimethylsilinolate)bis(tert-butylacetoacetate) (2) are reported in view of the potential applications as single source precursors for depositing metal silicate thin films by MOCVD. Solid state structure of [Zr(OSiMe ₃)₂(tbaoac)₂] revealed the complex to be a six coordinated monomer. Thermal analyses showed the utility of 1 and 2 as promising single-source precursors for the MOCVD of respective metal silicate films. MOCVD carried out using the new precursors over a wide temperature range of 400-800°C indicated dense and uniform films of composition M _1-xSi_xO₂ (M = Zr, Hf) on Si(100) substrate. The film composition was found to be dependent on the deposition temperature where the Si content varied with deposition temperature.

Original language	English
Pages	913-920
Number of pages	8
State	Published - 2005
Externally published	Yes
Event	15th European Conference on Chemical Vapor Deposition, EUROCVD-15 - Bochum, Germany Duration: 5 Sep 2005 → 9 Sep 2005

Conference

Conference	15th European Conference on Chemical Vapor Deposition, EUROCVD-15
Country/Territory	Germany
City	Bochum
Period	5/09/05 → 9/09/05

Cite this

@conference{f919c4941a8745a7bfbe774b00159352,

title = "Volatile single-source precursors for the mocvd of metal silicate thin films",

abstract = "The synthesis and characterisation of two novel complexes namely zirconium bis(trimethylsilinolate)bis(tert-butylacetoacetate) (1) and hafnium bis(trimethylsilinolate)bis(tert-butylacetoacetate) (2) are reported in view of the potential applications as single source precursors for depositing metal silicate thin films by MOCVD. Solid state structure of [Zr(OSiMe 3)2(tbaoac)2] revealed the complex to be a six coordinated monomer. Thermal analyses showed the utility of 1 and 2 as promising single-source precursors for the MOCVD of respective metal silicate films. MOCVD carried out using the new precursors over a wide temperature range of 400-800°C indicated dense and uniform films of composition M 1-xSixO2 (M = Zr, Hf) on Si(100) substrate. The film composition was found to be dependent on the deposition temperature where the Si content varied with deposition temperature.",

author = "Urmila Patil and Becker, {Hans Werner} and Manuela Winter and Fischer, {Roland A.} and Anjana Devi",

year = "2005",

language = "English",

pages = "913--920",

note = "15th European Conference on Chemical Vapor Deposition, EUROCVD-15 ; Conference date: 05-09-2005 Through 09-09-2005",

}

TY - CONF

T1 - Volatile single-source precursors for the mocvd of metal silicate thin films

AU - Patil, Urmila

AU - Becker, Hans Werner

AU - Winter, Manuela

AU - Fischer, Roland A.

AU - Devi, Anjana

PY - 2005

Y1 - 2005

N2 - The synthesis and characterisation of two novel complexes namely zirconium bis(trimethylsilinolate)bis(tert-butylacetoacetate) (1) and hafnium bis(trimethylsilinolate)bis(tert-butylacetoacetate) (2) are reported in view of the potential applications as single source precursors for depositing metal silicate thin films by MOCVD. Solid state structure of [Zr(OSiMe 3)2(tbaoac)2] revealed the complex to be a six coordinated monomer. Thermal analyses showed the utility of 1 and 2 as promising single-source precursors for the MOCVD of respective metal silicate films. MOCVD carried out using the new precursors over a wide temperature range of 400-800°C indicated dense and uniform films of composition M 1-xSixO2 (M = Zr, Hf) on Si(100) substrate. The film composition was found to be dependent on the deposition temperature where the Si content varied with deposition temperature.

AB - The synthesis and characterisation of two novel complexes namely zirconium bis(trimethylsilinolate)bis(tert-butylacetoacetate) (1) and hafnium bis(trimethylsilinolate)bis(tert-butylacetoacetate) (2) are reported in view of the potential applications as single source precursors for depositing metal silicate thin films by MOCVD. Solid state structure of [Zr(OSiMe 3)2(tbaoac)2] revealed the complex to be a six coordinated monomer. Thermal analyses showed the utility of 1 and 2 as promising single-source precursors for the MOCVD of respective metal silicate films. MOCVD carried out using the new precursors over a wide temperature range of 400-800°C indicated dense and uniform films of composition M 1-xSixO2 (M = Zr, Hf) on Si(100) substrate. The film composition was found to be dependent on the deposition temperature where the Si content varied with deposition temperature.

UR - http://www.scopus.com/inward/record.url?scp=31744447884&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:31744447884

SP - 913

EP - 920

T2 - 15th European Conference on Chemical Vapor Deposition, EUROCVD-15

Y2 - 5 September 2005 through 9 September 2005

ER -

Volatile single-source precursors for the mocvd of metal silicate thin films

Abstract

Conference

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