Abstract
Two new bis(ketoiminato)zinc(II) compounds that show excellent precursor properties for the chemical vapor deposition (CVD) of zinc oxide materials are presented. The synthesis of the ketoiminato zinc complexes [Zn{[(CH 2)x-OCH3]NC(CH3)=C(H)C(CH 3)=O}2] (1: x = 2; 2: x = 3) is straightforward and can easily be scaled up. Compounds 1 and 2 were analyzed by 1H and 13C NMR spectroscopy, elemental analysis, single-crystal X-ray diffraction analysis, and electron ionization mass spectrometry. The compounds exist as monomers with a distorted tetrahedral zinc center. Thermogravimetric studies, sublimation, and solubility tests reveal very promising properties for metal-organic CVD related applications. Preliminary metal-organic CVD experiments with the use of compound 1 were performed as a screening for the suitability of the new bis(ketoiminato)zinc complexes as precursors for the growth of ZnO thin films in the presence of oxygen. The films were characterized by X-ray diffraction, scanning electron microscopy, energy dispersive analysis of X-ray, and Rutherford backscattering measurements. The as-deposited ZnO films were stoichiometric; the crystalline films exhibited strong preferred orientation along the c-axis.
Original language | English |
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Pages (from-to) | 1366-1372 |
Number of pages | 7 |
Journal | European Journal of Inorganic Chemistry |
Issue number | 9 |
DOIs | |
State | Published - 2010 |
Externally published | Yes |
Keywords
- Chemical vapor deposition
- Ketoiminato ligands
- Thin films
- Zinc oxide