Abstract
Infrared transmission and Raman spectra of siloxene (Si6O3H6) and porous Si have been analyzed in terms of the structural composition. Siloxene consists of Si6-rings interconnected by oxygen and terminated by hydrogen, and corrugated Si(111)-planes saturated by OH and H. The pronounced photoluminescence of siloxene is mainly related to the Si6-rings. Porous Si shows similar luminescence and almost identical vibrational properties as siloxene, which makes this class of materials a possible candidate for the origin of the luminescence in p-Si. Annealing at temperatures below 300 °C and moderate illumination of siloxene induces the transformation from the Si-plane-like structure to the Si-ring-like structure. Anneal temperatures above 300 °C and intense illumination of both siloxene and p-Si leads to an effusion of hydrogen and an irreversible oxidation of the samples.
| Original language | English |
|---|---|
| Pages (from-to) | 309-313 |
| Number of pages | 5 |
| Journal | Physica Scripta |
| Volume | 1992 |
| Issue number | T45 |
| DOIs | |
| State | Published - 1 Jan 1992 |
| Externally published | Yes |
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