Virtual testing of high power devices at the rim of the safe operating area and beyond

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2 Scopus citations

Abstract

The development of high-performance power devices is increasingly supported by predictive computer simulations on the basis of well-calibrated physical device models. Today's challenge is to make virtual experiments and tests on the computer, which are qualitatively reliable and quantitatively accurate even for device structures that have never been built before, and under operational conditions that very rarely occur as long as the device is kept within the 'safe operating area (SOA)'. What we are interested in is to explore the rim of the SOA and even to go beyond it in order to study failure and, eventually, destruction mechanisms with a view to improving robustness and reliability of the devices. In particular in the field of high power electronics, predictive high-fidelity computer simulations of 'virtual desctruction' are of utmost importance. We will illustrate today's state of the art with reference to selected real-life examples.

Original languageEnglish
Title of host publicationProceedings of the 26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages6-11
Number of pages6
ISBN (Print)9781479929177
DOIs
StatePublished - 2014
Event26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014 - Waikoloa, HI, United States
Duration: 15 Jun 201419 Jun 2014

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN (Print)1063-6854

Conference

Conference26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014
Country/TerritoryUnited States
CityWaikoloa, HI
Period15/06/1419/06/14

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