TY - GEN
T1 - Virtual testing of high power devices at the rim of the safe operating area and beyond
AU - Wachutka, Gerhard
PY - 2014
Y1 - 2014
N2 - The development of high-performance power devices is increasingly supported by predictive computer simulations on the basis of well-calibrated physical device models. Today's challenge is to make virtual experiments and tests on the computer, which are qualitatively reliable and quantitatively accurate even for device structures that have never been built before, and under operational conditions that very rarely occur as long as the device is kept within the 'safe operating area (SOA)'. What we are interested in is to explore the rim of the SOA and even to go beyond it in order to study failure and, eventually, destruction mechanisms with a view to improving robustness and reliability of the devices. In particular in the field of high power electronics, predictive high-fidelity computer simulations of 'virtual desctruction' are of utmost importance. We will illustrate today's state of the art with reference to selected real-life examples.
AB - The development of high-performance power devices is increasingly supported by predictive computer simulations on the basis of well-calibrated physical device models. Today's challenge is to make virtual experiments and tests on the computer, which are qualitatively reliable and quantitatively accurate even for device structures that have never been built before, and under operational conditions that very rarely occur as long as the device is kept within the 'safe operating area (SOA)'. What we are interested in is to explore the rim of the SOA and even to go beyond it in order to study failure and, eventually, destruction mechanisms with a view to improving robustness and reliability of the devices. In particular in the field of high power electronics, predictive high-fidelity computer simulations of 'virtual desctruction' are of utmost importance. We will illustrate today's state of the art with reference to selected real-life examples.
UR - http://www.scopus.com/inward/record.url?scp=84905492831&partnerID=8YFLogxK
U2 - 10.1109/ISPSD.2014.6855963
DO - 10.1109/ISPSD.2014.6855963
M3 - Conference contribution
AN - SCOPUS:84905492831
SN - 9781479929177
T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs
SP - 6
EP - 11
BT - Proceedings of the 26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014
Y2 - 15 June 2014 through 19 June 2014
ER -