@inproceedings{3d368095dd7d4013acb14d037ec4a55c,
title = "Very high temperature operation of ∼ 5.75 μm quantum cascade lasers",
abstract = "We have fabricated GaInAs/AlInAs strain-compensated quantum cascade lasers with InP and GaInAs cladding layers using solid-source molecular-beam epitaxy (MBE). Low threshold current densities and high temperature operation of uncoated devices, with a record value of 490 K, have been achieved in pulsed mode.",
author = "A. Friedrich and G. Scarpa and G. Boehm and Amann, {M. C.}",
year = "2005",
month = jun,
day = "30",
doi = "10.1063/1.1994716",
language = "English",
isbn = "0735402574",
series = "AIP Conference Proceedings",
pages = "1567--1568",
booktitle = "PHYSICS OF SEMICONDUCTORS",
note = "PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 ; Conference date: 26-07-2004 Through 30-07-2004",
}