Very High In-Plane Magnetic Field Sensitivity in Ion-Implanted 4H-SiC PIN Diodes

Hesham Okeil; Tobias Erlbacher; Gerhard Wachutka

doi:10.1002/aelm.202300531

Very High In-Plane Magnetic Field Sensitivity in Ion-Implanted 4H-SiC PIN Diodes

Hesham Okeil
, Tobias Erlbacher
, Gerhard Wachutka

Computation, Information and Technology

Technical University of Munich
Friedrich-Alexander Universitat Erlangen-Nurnberg (FAU)
Nexperia Germany GmbH

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

In this study ion-implanted lateral 4H-SiC pin diodes are reported, which show an unexpectedly high room temperature in-plane magnetic field sensitivity approaching 100 % at 0.5 Tesla. Using dedicated TCAD simulations the underlying transduction mechanism is studied, and the effect of implantation-induced carrier traps on the observed high sensitivity is unraveled. The study shows how such traps can greatly control the injection conditions at the highly doped implant regions providing a plausible explanation for an observed portion in the IV-characteristics of the pin diodes exhibiting the aforementioned high magnetic field sensitivity.

Original language	English
Article number	2300531
Journal	Advanced Electronic Materials
Volume	10
Issue number	5
DOIs	https://doi.org/10.1002/aelm.202300531
State	Published - May 2024

Keywords

4H-SiC pin diode
injection confinement
ion implant-induced traps
magnetic field sensitivity

Access to Document

10.1002/aelm.202300531

Cite this

@article{bfaa96ebf7054ae9964fcf89bd0642cb,

title = "Very High In-Plane Magnetic Field Sensitivity in Ion-Implanted 4H-SiC PIN Diodes",

abstract = "In this study ion-implanted lateral 4H-SiC pin diodes are reported, which show an unexpectedly high room temperature in-plane magnetic field sensitivity approaching 100 \% at 0.5 Tesla. Using dedicated TCAD simulations the underlying transduction mechanism is studied, and the effect of implantation-induced carrier traps on the observed high sensitivity is unraveled. The study shows how such traps can greatly control the injection conditions at the highly doped implant regions providing a plausible explanation for an observed portion in the IV-characteristics of the pin diodes exhibiting the aforementioned high magnetic field sensitivity.",

keywords = "4H-SiC pin diode, injection confinement, ion implant-induced traps, magnetic field sensitivity",

author = "Hesham Okeil and Tobias Erlbacher and Gerhard Wachutka",

note = "Publisher Copyright: {\textcopyright} 2024 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbH.",

year = "2024",

month = may,

doi = "10.1002/aelm.202300531",

language = "English",

volume = "10",

journal = "Advanced Electronic Materials",

issn = "2199-160X",

publisher = "John Wiley and Sons Inc.",

number = "5",

}

TY - JOUR

T1 - Very High In-Plane Magnetic Field Sensitivity in Ion-Implanted 4H-SiC PIN Diodes

AU - Okeil, Hesham

AU - Erlbacher, Tobias

AU - Wachutka, Gerhard

PY - 2024/5

Y1 - 2024/5

N2 - In this study ion-implanted lateral 4H-SiC pin diodes are reported, which show an unexpectedly high room temperature in-plane magnetic field sensitivity approaching 100 % at 0.5 Tesla. Using dedicated TCAD simulations the underlying transduction mechanism is studied, and the effect of implantation-induced carrier traps on the observed high sensitivity is unraveled. The study shows how such traps can greatly control the injection conditions at the highly doped implant regions providing a plausible explanation for an observed portion in the IV-characteristics of the pin diodes exhibiting the aforementioned high magnetic field sensitivity.

AB - In this study ion-implanted lateral 4H-SiC pin diodes are reported, which show an unexpectedly high room temperature in-plane magnetic field sensitivity approaching 100 % at 0.5 Tesla. Using dedicated TCAD simulations the underlying transduction mechanism is studied, and the effect of implantation-induced carrier traps on the observed high sensitivity is unraveled. The study shows how such traps can greatly control the injection conditions at the highly doped implant regions providing a plausible explanation for an observed portion in the IV-characteristics of the pin diodes exhibiting the aforementioned high magnetic field sensitivity.

KW - 4H-SiC pin diode

KW - injection confinement

KW - ion implant-induced traps

KW - magnetic field sensitivity

UR - https://www.scopus.com/pages/publications/85188555925

U2 - 10.1002/aelm.202300531

DO - 10.1002/aelm.202300531

M3 - Article

AN - SCOPUS:85188555925

SN - 2199-160X

VL - 10

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

IS - 5

M1 - 2300531

ER -

Very High In-Plane Magnetic Field Sensitivity in Ion-Implanted 4H-SiC PIN Diodes

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this