Very High In-Plane Magnetic Field Sensitivity in Ion-Implanted 4H-SiC PIN Diodes

Hesham Okeil; Tobias Erlbacher; Gerhard Wachutka

doi:10.1002/aelm.202300531

Very High In-Plane Magnetic Field Sensitivity in Ion-Implanted 4H-SiC PIN Diodes

Hesham Okeil, Tobias Erlbacher, Gerhard Wachutka

Computation, Information and Technology

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

In this study ion-implanted lateral 4H-SiC pin diodes are reported, which show an unexpectedly high room temperature in-plane magnetic field sensitivity approaching 100 % at 0.5 Tesla. Using dedicated TCAD simulations the underlying transduction mechanism is studied, and the effect of implantation-induced carrier traps on the observed high sensitivity is unraveled. The study shows how such traps can greatly control the injection conditions at the highly doped implant regions providing a plausible explanation for an observed portion in the IV-characteristics of the pin diodes exhibiting the aforementioned high magnetic field sensitivity.

Original language	English
Article number	2300531
Journal	Advanced Electronic Materials
Volume	10
Issue number	5
DOIs	https://doi.org/10.1002/aelm.202300531
State	Published - May 2024

Keywords

4H-SiC pin diode
injection confinement
ion implant-induced traps
magnetic field sensitivity

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10.1002/aelm.202300531

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title = "Very High In-Plane Magnetic Field Sensitivity in Ion-Implanted 4H-SiC PIN Diodes",

abstract = "In this study ion-implanted lateral 4H-SiC pin diodes are reported, which show an unexpectedly high room temperature in-plane magnetic field sensitivity approaching 100 % at 0.5 Tesla. Using dedicated TCAD simulations the underlying transduction mechanism is studied, and the effect of implantation-induced carrier traps on the observed high sensitivity is unraveled. The study shows how such traps can greatly control the injection conditions at the highly doped implant regions providing a plausible explanation for an observed portion in the IV-characteristics of the pin diodes exhibiting the aforementioned high magnetic field sensitivity.",

keywords = "4H-SiC pin diode, injection confinement, ion implant-induced traps, magnetic field sensitivity",

author = "Hesham Okeil and Tobias Erlbacher and Gerhard Wachutka",

note = "Publisher Copyright: {\textcopyright} 2024 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbH.",

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doi = "10.1002/aelm.202300531",

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T1 - Very High In-Plane Magnetic Field Sensitivity in Ion-Implanted 4H-SiC PIN Diodes

AU - Okeil, Hesham

AU - Erlbacher, Tobias

AU - Wachutka, Gerhard

PY - 2024/5

Y1 - 2024/5

N2 - In this study ion-implanted lateral 4H-SiC pin diodes are reported, which show an unexpectedly high room temperature in-plane magnetic field sensitivity approaching 100 % at 0.5 Tesla. Using dedicated TCAD simulations the underlying transduction mechanism is studied, and the effect of implantation-induced carrier traps on the observed high sensitivity is unraveled. The study shows how such traps can greatly control the injection conditions at the highly doped implant regions providing a plausible explanation for an observed portion in the IV-characteristics of the pin diodes exhibiting the aforementioned high magnetic field sensitivity.

AB - In this study ion-implanted lateral 4H-SiC pin diodes are reported, which show an unexpectedly high room temperature in-plane magnetic field sensitivity approaching 100 % at 0.5 Tesla. Using dedicated TCAD simulations the underlying transduction mechanism is studied, and the effect of implantation-induced carrier traps on the observed high sensitivity is unraveled. The study shows how such traps can greatly control the injection conditions at the highly doped implant regions providing a plausible explanation for an observed portion in the IV-characteristics of the pin diodes exhibiting the aforementioned high magnetic field sensitivity.

KW - 4H-SiC pin diode

KW - injection confinement

KW - ion implant-induced traps

KW - magnetic field sensitivity

UR - http://www.scopus.com/inward/record.url?scp=85188555925&partnerID=8YFLogxK

U2 - 10.1002/aelm.202300531

DO - 10.1002/aelm.202300531

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VL - 10

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

IS - 5

M1 - 2300531

ER -

Very High In-Plane Magnetic Field Sensitivity in Ion-Implanted 4H-SiC PIN Diodes

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Keywords

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