Vertical transport in group III-nitride heterostructures and application in AlN/GaN resonant tunneling diodes

M. Hermann, E. Monroy, A. Helman, B. Baur, M. Albrecht, B. Daudin, O. Ambacher, M. Stutzmann, M. Eickhoff

Research output: Contribution to journalArticlepeer-review

58 Scopus citations

Abstract

We present a systematic study of vertical transport in AlGaN/GaN heterostructures. The influence of barrier thickness and Al-concentration on the current across AlGaN barriers is investigated experimentally and compared to model calculations. The effect of polarization fields on the electronic properties of single- and double barrier heterostructures is discussed and experimental results are reviewed. AlN/GaN double barrier RTD structures are fabricated under optimized growth conditions. Experimental analysis of their electronic properties reveals indications for resonant tunneling in the low forward bias regime.

Original languageEnglish
Pages (from-to)2210-2227
Number of pages18
JournalPhysica Status Solidi C: Conferences
Volume1
Issue number8
DOIs
StatePublished - 2004

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