Vertical transport in group III-nitride heterostructures and application in AlN/GaN resonant tunneling diodes

M. Hermann; E. Monroy; A. Helman; B. Baur; M. Albrecht; B. Daudin; O. Ambacher; M. Stutzmann; M. Eickhoff

doi:10.1002/pssc.200404771

Vertical transport in group III-nitride heterostructures and application in AlN/GaN resonant tunneling diodes

M. Hermann, E. Monroy, A. Helman, B. Baur, M. Albrecht, B. Daudin, O. Ambacher, M. Stutzmann, M. Eickhoff

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

59 Scopus citations

Abstract

We present a systematic study of vertical transport in AlGaN/GaN heterostructures. The influence of barrier thickness and Al-concentration on the current across AlGaN barriers is investigated experimentally and compared to model calculations. The effect of polarization fields on the electronic properties of single- and double barrier heterostructures is discussed and experimental results are reviewed. AlN/GaN double barrier RTD structures are fabricated under optimized growth conditions. Experimental analysis of their electronic properties reveals indications for resonant tunneling in the low forward bias regime.

Original language	English
Pages (from-to)	2210-2227
Number of pages	18
Journal	Physica Status Solidi C: Conferences
Volume	1
Issue number	8
DOIs	https://doi.org/10.1002/pssc.200404771
State	Published - 2004

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title = "Vertical transport in group III-nitride heterostructures and application in AlN/GaN resonant tunneling diodes",

abstract = "We present a systematic study of vertical transport in AlGaN/GaN heterostructures. The influence of barrier thickness and Al-concentration on the current across AlGaN barriers is investigated experimentally and compared to model calculations. The effect of polarization fields on the electronic properties of single- and double barrier heterostructures is discussed and experimental results are reviewed. AlN/GaN double barrier RTD structures are fabricated under optimized growth conditions. Experimental analysis of their electronic properties reveals indications for resonant tunneling in the low forward bias regime.",

author = "M. Hermann and E. Monroy and A. Helman and B. Baur and M. Albrecht and B. Daudin and O. Ambacher and M. Stutzmann and M. Eickhoff",

year = "2004",

doi = "10.1002/pssc.200404771",

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T1 - Vertical transport in group III-nitride heterostructures and application in AlN/GaN resonant tunneling diodes

AU - Hermann, M.

AU - Monroy, E.

AU - Helman, A.

AU - Baur, B.

AU - Albrecht, M.

AU - Daudin, B.

AU - Ambacher, O.

AU - Stutzmann, M.

AU - Eickhoff, M.

PY - 2004

Y1 - 2004

N2 - We present a systematic study of vertical transport in AlGaN/GaN heterostructures. The influence of barrier thickness and Al-concentration on the current across AlGaN barriers is investigated experimentally and compared to model calculations. The effect of polarization fields on the electronic properties of single- and double barrier heterostructures is discussed and experimental results are reviewed. AlN/GaN double barrier RTD structures are fabricated under optimized growth conditions. Experimental analysis of their electronic properties reveals indications for resonant tunneling in the low forward bias regime.

AB - We present a systematic study of vertical transport in AlGaN/GaN heterostructures. The influence of barrier thickness and Al-concentration on the current across AlGaN barriers is investigated experimentally and compared to model calculations. The effect of polarization fields on the electronic properties of single- and double barrier heterostructures is discussed and experimental results are reviewed. AlN/GaN double barrier RTD structures are fabricated under optimized growth conditions. Experimental analysis of their electronic properties reveals indications for resonant tunneling in the low forward bias regime.

UR - http://www.scopus.com/inward/record.url?scp=3242717694&partnerID=8YFLogxK

U2 - 10.1002/pssc.200404771

DO - 10.1002/pssc.200404771

M3 - Article

AN - SCOPUS:3242717694

SN - 1610-1634

VL - 1

SP - 2210

EP - 2227

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 8

ER -

Vertical transport in group III-nitride heterostructures and application in AlN/GaN resonant tunneling diodes

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