Vertical-cavity surface-emitting laser diodes for telecommunication wavelengths

Markus C. Amann; Markus Ortsiefer; Robert Shau; Jürgen Roßkopf

doi:10.1117/12.460475

Vertical-cavity surface-emitting laser diodes for telecommunication wavelengths

Markus C. Amann
, Markus Ortsiefer
, Robert Shau
, Jürgen Roßkopf

Chair of Semiconductor Technology

Walter Schottky Institut

Research output: Contribution to journal › Conference article › peer-review

15 Scopus citations

Abstract

A new approach for InP-based long-wavelength VCSELs based on buried tunnel junctions: the buried-tunnel-junction (BTJ) VCSEL is reviewed. Excellent cw laser performance has been demonstrated for BTJ-VCSELs in the 1.55μm wavelength range, such as sub-mA threshold currents, 0.9 V threshold voltage (at λ=1.55μm), operation voltages below 1.4V, 10-70 Ω series resistance, differential efficiencies >25%, up to more than 7mW optical output power, >100°C cw operation, stable polarization and single-mode operation with SSR of the order 50 dB. Also, recent achievements on high-speed long-wavelength VCSELs are reported.

Original language	English
Pages (from-to)	123-129
Number of pages	7
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4871
DOIs	https://doi.org/10.1117/12.460475
State	Published - 2002
Event	Semiconductor Lasers and Optical Amplifiers for Lightwave Communication Systems - Boston, MA, United States Duration: 29 Jul 2002 → 30 Jul 2002

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title = "Vertical-cavity surface-emitting laser diodes for telecommunication wavelengths",

abstract = "A new approach for InP-based long-wavelength VCSELs based on buried tunnel junctions: the buried-tunnel-junction (BTJ) VCSEL is reviewed. Excellent cw laser performance has been demonstrated for BTJ-VCSELs in the 1.55μm wavelength range, such as sub-mA threshold currents, 0.9 V threshold voltage (at λ=1.55μm), operation voltages below 1.4V, 10-70 Ω series resistance, differential efficiencies >25\%, up to more than 7mW optical output power, >100°C cw operation, stable polarization and single-mode operation with SSR of the order 50 dB. Also, recent achievements on high-speed long-wavelength VCSELs are reported.",

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journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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note = "Semiconductor Lasers and Optical Amplifiers for Lightwave Communication Systems ; Conference date: 29-07-2002 Through 30-07-2002",

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T1 - Vertical-cavity surface-emitting laser diodes for telecommunication wavelengths

AU - Amann, Markus C.

AU - Ortsiefer, Markus

AU - Shau, Robert

AU - Roßkopf, Jürgen

PY - 2002

Y1 - 2002

N2 - A new approach for InP-based long-wavelength VCSELs based on buried tunnel junctions: the buried-tunnel-junction (BTJ) VCSEL is reviewed. Excellent cw laser performance has been demonstrated for BTJ-VCSELs in the 1.55μm wavelength range, such as sub-mA threshold currents, 0.9 V threshold voltage (at λ=1.55μm), operation voltages below 1.4V, 10-70 Ω series resistance, differential efficiencies >25%, up to more than 7mW optical output power, >100°C cw operation, stable polarization and single-mode operation with SSR of the order 50 dB. Also, recent achievements on high-speed long-wavelength VCSELs are reported.

AB - A new approach for InP-based long-wavelength VCSELs based on buried tunnel junctions: the buried-tunnel-junction (BTJ) VCSEL is reviewed. Excellent cw laser performance has been demonstrated for BTJ-VCSELs in the 1.55μm wavelength range, such as sub-mA threshold currents, 0.9 V threshold voltage (at λ=1.55μm), operation voltages below 1.4V, 10-70 Ω series resistance, differential efficiencies >25%, up to more than 7mW optical output power, >100°C cw operation, stable polarization and single-mode operation with SSR of the order 50 dB. Also, recent achievements on high-speed long-wavelength VCSELs are reported.

UR - https://www.scopus.com/pages/publications/0038756002

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DO - 10.1117/12.460475

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SN - 0277-786X

VL - 4871

SP - 123

EP - 129

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Semiconductor Lasers and Optical Amplifiers for Lightwave Communication Systems

Y2 - 29 July 2002 through 30 July 2002

ER -

Vertical-cavity surface-emitting laser diodes for telecommunication wavelengths

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