Valence band splitting in wurtzite InGaAs nanoneedles studied by photoluminescence excitation spectroscopy

Xiaodong Wang; Ilaria Zardo; Danče Spirkoska; Sara Yazji; Kar Wei Ng; Wai Son Ko; Connie J. Chang-Hasnain; Jonathan J. Finley; Gerhard Abstreiter

doi:10.1021/nn504512u

Valence band splitting in wurtzite InGaAs nanoneedles studied by photoluminescence excitation spectroscopy

Xiaodong Wang, Ilaria Zardo, Danče Spirkoska, Sara Yazji, Kar Wei Ng, Wai Son Ko, Connie J. Chang-Hasnain, Jonathan J. Finley, Gerhard Abstreiter

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

We use low-temperature microphotoluminescence and photoluminescence excitation spectroscopy to measure the valence band parameters of single wurtzite InGaAs nanoneedles. The effective indium composition is measured by means of polarization-dependent Raman spectroscopy. We find that the heavy-hole and light-hole splitting is ∼95 meV at 10 K and the Stokes shift is in the range of 35-55 meV. These findings provide important insight in the band structure of wurtzite InGaAs that could be used for future bandgap engineering. (Figure Presented).

Original language	English
Pages (from-to)	11440-11446
Number of pages	7
Journal	ACS Nano
Volume	8
Issue number	11
DOIs	https://doi.org/10.1021/nn504512u
State	Published - 25 Nov 2014

Keywords

Band structure
InGaAs nanoneedle
Photoluminescence excitation spectroscopy
Raman spectroscopy
Wurtzite

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10.1021/nn504512u

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title = "Valence band splitting in wurtzite InGaAs nanoneedles studied by photoluminescence excitation spectroscopy",

abstract = "We use low-temperature microphotoluminescence and photoluminescence excitation spectroscopy to measure the valence band parameters of single wurtzite InGaAs nanoneedles. The effective indium composition is measured by means of polarization-dependent Raman spectroscopy. We find that the heavy-hole and light-hole splitting is ∼95 meV at 10 K and the Stokes shift is in the range of 35-55 meV. These findings provide important insight in the band structure of wurtzite InGaAs that could be used for future bandgap engineering. (Figure Presented).",

keywords = "Band structure, InGaAs nanoneedle, Photoluminescence excitation spectroscopy, Raman spectroscopy, Wurtzite",

author = "Xiaodong Wang and Ilaria Zardo and Dan{\v c}e Spirkoska and Sara Yazji and Ng, {Kar Wei} and Ko, {Wai Son} and Chang-Hasnain, {Connie J.} and Finley, {Jonathan J.} and Gerhard Abstreiter",

note = "Publisher Copyright: {\textcopyright} 2014 American Chemical Society.",

year = "2014",

month = nov,

day = "25",

doi = "10.1021/nn504512u",

language = "English",

volume = "8",

pages = "11440--11446",

journal = "ACS Nano",

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TY - JOUR

T1 - Valence band splitting in wurtzite InGaAs nanoneedles studied by photoluminescence excitation spectroscopy

AU - Wang, Xiaodong

AU - Zardo, Ilaria

AU - Spirkoska, Danče

AU - Yazji, Sara

AU - Ng, Kar Wei

AU - Ko, Wai Son

AU - Chang-Hasnain, Connie J.

AU - Finley, Jonathan J.

AU - Abstreiter, Gerhard

PY - 2014/11/25

Y1 - 2014/11/25

N2 - We use low-temperature microphotoluminescence and photoluminescence excitation spectroscopy to measure the valence band parameters of single wurtzite InGaAs nanoneedles. The effective indium composition is measured by means of polarization-dependent Raman spectroscopy. We find that the heavy-hole and light-hole splitting is ∼95 meV at 10 K and the Stokes shift is in the range of 35-55 meV. These findings provide important insight in the band structure of wurtzite InGaAs that could be used for future bandgap engineering. (Figure Presented).

AB - We use low-temperature microphotoluminescence and photoluminescence excitation spectroscopy to measure the valence band parameters of single wurtzite InGaAs nanoneedles. The effective indium composition is measured by means of polarization-dependent Raman spectroscopy. We find that the heavy-hole and light-hole splitting is ∼95 meV at 10 K and the Stokes shift is in the range of 35-55 meV. These findings provide important insight in the band structure of wurtzite InGaAs that could be used for future bandgap engineering. (Figure Presented).

KW - Band structure

KW - InGaAs nanoneedle

KW - Photoluminescence excitation spectroscopy

KW - Raman spectroscopy

KW - Wurtzite

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U2 - 10.1021/nn504512u

DO - 10.1021/nn504512u

M3 - Article

AN - SCOPUS:84912553448

SN - 1936-0851

VL - 8

SP - 11440

EP - 11446

JO - ACS Nano

JF - ACS Nano

IS - 11

ER -

Valence band splitting in wurtzite InGaAs nanoneedles studied by photoluminescence excitation spectroscopy

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