Ultrafast intersubband scattering of holes in p-type modulation-doped Si1-xGex/Si multiple quantum wells

M. Woerner; R. A. Kaindl; M. Wurm; K. Reimann; T. Elsaesser; C. Miesner; K. Brunner; G. Abstreiter

doi:10.1016/S1386-9477(02)00176-5

Ultrafast intersubband scattering of holes in p-type modulation-doped Si_1-xGe_x/Si multiple quantum wells

M. Woerner
, R. A. Kaindl
, M. Wurm
, K. Reimann
, T. Elsaesser
, C. Miesner
, K. Brunner
, G. Abstreiter

Natural Sciences

Research output: Contribution to journal › Article › peer-review

Abstract

We report on an experimental and theoretical study of intersubband relaxation of holes in p-type modulation-doped Si_1-xGe_x/Si multiple quantum wells. The ultrafast hole dynamics is studied in pump-probe experiments with 150 fs mid-infrared pulses. For 4.4 nm wide wells (x = 0.5) the lifetime of holes in the second heavy hole subband is only 250 fs due to rapid emission of optical phonons via the deformation potential interaction. Model calculations of hole-phonon scattering give an almost identical value and point to the crucial role of cascaded scattering via an intermediate subband with light-hole-split-off symmetry.

Original language	English
Pages (from-to)	485-488
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	13
Issue number	2-4
DOIs	https://doi.org/10.1016/S1386-9477(02)00176-5
State	Published - Mar 2002

Keywords

Intersubband relaxation
Optical deformation potential
SiGe quantum walls

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10.1016/S1386-9477(02)00176-5

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title = "Ultrafast intersubband scattering of holes in p-type modulation-doped Si1-xGex/Si multiple quantum wells",

abstract = "We report on an experimental and theoretical study of intersubband relaxation of holes in p-type modulation-doped Si1-xGex/Si multiple quantum wells. The ultrafast hole dynamics is studied in pump-probe experiments with 150 fs mid-infrared pulses. For 4.4 nm wide wells (x = 0.5) the lifetime of holes in the second heavy hole subband is only 250 fs due to rapid emission of optical phonons via the deformation potential interaction. Model calculations of hole-phonon scattering give an almost identical value and point to the crucial role of cascaded scattering via an intermediate subband with light-hole-split-off symmetry.",

keywords = "Intersubband relaxation, Optical deformation potential, SiGe quantum walls",

author = "M. Woerner and Kaindl, \{R. A.\} and M. Wurm and K. Reimann and T. Elsaesser and C. Miesner and K. Brunner and G. Abstreiter",

year = "2002",

month = mar,

doi = "10.1016/S1386-9477(02)00176-5",

language = "English",

volume = "13",

pages = "485--488",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

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publisher = "Elsevier B.V.",

number = "2-4",

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TY - JOUR

T1 - Ultrafast intersubband scattering of holes in p-type modulation-doped Si1-xGex/Si multiple quantum wells

AU - Woerner, M.

AU - Kaindl, R. A.

AU - Wurm, M.

AU - Reimann, K.

AU - Elsaesser, T.

AU - Miesner, C.

AU - Brunner, K.

AU - Abstreiter, G.

PY - 2002/3

Y1 - 2002/3

N2 - We report on an experimental and theoretical study of intersubband relaxation of holes in p-type modulation-doped Si1-xGex/Si multiple quantum wells. The ultrafast hole dynamics is studied in pump-probe experiments with 150 fs mid-infrared pulses. For 4.4 nm wide wells (x = 0.5) the lifetime of holes in the second heavy hole subband is only 250 fs due to rapid emission of optical phonons via the deformation potential interaction. Model calculations of hole-phonon scattering give an almost identical value and point to the crucial role of cascaded scattering via an intermediate subband with light-hole-split-off symmetry.

AB - We report on an experimental and theoretical study of intersubband relaxation of holes in p-type modulation-doped Si1-xGex/Si multiple quantum wells. The ultrafast hole dynamics is studied in pump-probe experiments with 150 fs mid-infrared pulses. For 4.4 nm wide wells (x = 0.5) the lifetime of holes in the second heavy hole subband is only 250 fs due to rapid emission of optical phonons via the deformation potential interaction. Model calculations of hole-phonon scattering give an almost identical value and point to the crucial role of cascaded scattering via an intermediate subband with light-hole-split-off symmetry.

KW - Intersubband relaxation

KW - Optical deformation potential

KW - SiGe quantum walls

UR - https://www.scopus.com/pages/publications/0036493139

U2 - 10.1016/S1386-9477(02)00176-5

DO - 10.1016/S1386-9477(02)00176-5

M3 - Article

AN - SCOPUS:0036493139

SN - 1386-9477

VL - 13

SP - 485

EP - 488

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 2-4

ER -

Ultrafast intersubband scattering of holes in p-type modulation-doped Si_1-xGe_x/Si multiple quantum wells

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