TY - GEN
T1 - Ultrafast generation of magnetic fields in a Schottky diode
AU - Buess, M.
AU - Acremann, Y.
AU - Back, C. H.
AU - Dumm, M.
AU - Bayreuther, G.
AU - Pescia, D.
N1 - Publisher Copyright:
©2002 IEEE.
PY - 2002
Y1 - 2002
N2 - For the development of future magnetic data storage technologies, the ultrafast generation of local magnetic fields is essential. Subnanosecond excitation of the magnetic state has so far been achieved by launching current pulses into micro-coils and micro-striplines and by using the high-energy electron beams. Local injection of a spin-polarized current through an all-metal junction has been proposed as an efficient method of switching magnetic elements, and experiments seem to confirm this. Here we introduce a different scheme for the ultrafast generation of local magnetic fields in such a hybrid structure. The basis of our approach is to optically pump a Schottky diode with a focused, ∼150-fs laser pulse. The laser generates a current across the semiconductor-metal junction, which in turn gives rise to an in-plane magnetic field. This scheme combines the localization of current injection techniques with the speed of current generation at a Schottky barrier. Specific advantages include the ability to rapidly create local fields along any in-plane direction anywhere on the sample, the ability to scan the field over many magnetic elements and the ability to tune the magnitude of the field with the diode bias voltage.
AB - For the development of future magnetic data storage technologies, the ultrafast generation of local magnetic fields is essential. Subnanosecond excitation of the magnetic state has so far been achieved by launching current pulses into micro-coils and micro-striplines and by using the high-energy electron beams. Local injection of a spin-polarized current through an all-metal junction has been proposed as an efficient method of switching magnetic elements, and experiments seem to confirm this. Here we introduce a different scheme for the ultrafast generation of local magnetic fields in such a hybrid structure. The basis of our approach is to optically pump a Schottky diode with a focused, ∼150-fs laser pulse. The laser generates a current across the semiconductor-metal junction, which in turn gives rise to an in-plane magnetic field. This scheme combines the localization of current injection techniques with the speed of current generation at a Schottky barrier. Specific advantages include the ability to rapidly create local fields along any in-plane direction anywhere on the sample, the ability to scan the field over many magnetic elements and the ability to tune the magnitude of the field with the diode bias voltage.
UR - http://www.scopus.com/inward/record.url?scp=85017244804&partnerID=8YFLogxK
U2 - 10.1109/INTMAG.2002.1000802
DO - 10.1109/INTMAG.2002.1000802
M3 - Conference contribution
AN - SCOPUS:85017244804
T3 - INTERMAG Europe 2002 - IEEE International Magnetics Conference
BT - INTERMAG Europe 2002 - IEEE International Magnetics Conference
A2 - Fidler, J.
A2 - Hillebrands, B.
A2 - Ross, C.
A2 - Weller, D.
A2 - Folks, L.
A2 - Hill, E.
A2 - Vazquez Villalabeitia, M.
A2 - Bain, J. A.
A2 - De Boeck, Jo
A2 - Wood, R.
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2002 IEEE International Magnetics Conference, INTERMAG Europe 2002
Y2 - 28 April 2002 through 2 May 2002
ER -