Ultrafast few-fermion dynamics in single self-assembled InGaAs/GaAs quantum dots

M. Betz, M. Zecherle, C. Ruppert, E. C. Clark, G. Abstreiter, J. J. Finley

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We review a comprehensive study of the ultrafast optoelectronic properties of a single self-assembled InGaAs/GaAs quantum dot. While manipulation of the artificial atom relies on two widely and independently tunable picoseconds pulse trains, sensitive readout is achieved via the ~pA photocurrent of the diode device. In particular, the absorption changes after occupation of an s-shell exciton reveal a biexciton absorption line as well as previously unobserved p-shell transitions in the presence of s-shell population. In addition, time-resolved data directly maps the picosecond tunneling times of electrons and holes out of the dot. Beyond these incoherent phenomena, we also realize coherent QD manipulations. Those comprise well-known excitonic Rabi-oscillations as well as single-pulse biexciton generation and conditional Rabi-oscillations of the exciton-biexciton transition after deterministic exciton preparation.

Original languageEnglish
Title of host publicationUltrafast Phenomena in Semiconductors and Nanostructure Materials XV
DOIs
StatePublished - 2011
EventUltrafast Phenomena in Semiconductors and Nanostructure Materials XV - San Francisco, CA, United States
Duration: 23 Jan 201126 Jan 2011

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7937
ISSN (Print)0277-786X

Conference

ConferenceUltrafast Phenomena in Semiconductors and Nanostructure Materials XV
Country/TerritoryUnited States
CitySan Francisco, CA
Period23/01/1126/01/11

Keywords

  • coherent spectroscopy
  • semiconductor quantum dots
  • ultrafast spectroscopy

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