Ultrafast electron-phonon scattering in semiconductors studied by nondegenerate four-wave mixing

M. Betz; G. Göger; A. Leitenstorfer; K. Ortner; C. R. Becker; G. Böhm; A. Laubereau

doi:10.1103/PhysRevB.60.R11265

Ultrafast electron-phonon scattering in semiconductors studied by nondegenerate four-wave mixing

M. Betz
, G. Göger
, A. Leitenstorfer
, K. Ortner
, C. R. Becker
, G. Böhm
, A. Laubereau

Department of Physics

Technical University of Munich
University of Würzburg
Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

Nondegenerate four-wave-mixing allows one to monitor the femtosecond relaxation of free carriers in GaAs and CdTe at densities as low as 2×10¹⁵ cm^-3. The energy relaxation time of electrons via LO-phonon emission is determined to be 240±20 fs in GaAs. In more polar CdTe, this time constant is found to be as short as 70±15 fs which is even shorter than the phonon oscillation period of 200 fs.

Original language	English
Pages (from-to)	R11265-R11268
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	60
Issue number	16
DOIs	https://doi.org/10.1103/PhysRevB.60.R11265
State	Published - 1999

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10.1103/PhysRevB.60.R11265

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abstract = "Nondegenerate four-wave-mixing allows one to monitor the femtosecond relaxation of free carriers in GaAs and CdTe at densities as low as 2×1015 cm-3. The energy relaxation time of electrons via LO-phonon emission is determined to be 240±20 fs in GaAs. In more polar CdTe, this time constant is found to be as short as 70±15 fs which is even shorter than the phonon oscillation period of 200 fs.",

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AU - Betz, M.

AU - Göger, G.

AU - Leitenstorfer, A.

AU - Ortner, K.

AU - Becker, C. R.

AU - Böhm, G.

AU - Laubereau, A.

PY - 1999

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N2 - Nondegenerate four-wave-mixing allows one to monitor the femtosecond relaxation of free carriers in GaAs and CdTe at densities as low as 2×1015 cm-3. The energy relaxation time of electrons via LO-phonon emission is determined to be 240±20 fs in GaAs. In more polar CdTe, this time constant is found to be as short as 70±15 fs which is even shorter than the phonon oscillation period of 200 fs.

AB - Nondegenerate four-wave-mixing allows one to monitor the femtosecond relaxation of free carriers in GaAs and CdTe at densities as low as 2×1015 cm-3. The energy relaxation time of electrons via LO-phonon emission is determined to be 240±20 fs in GaAs. In more polar CdTe, this time constant is found to be as short as 70±15 fs which is even shorter than the phonon oscillation period of 200 fs.

UR - https://www.scopus.com/pages/publications/0001703736

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DO - 10.1103/PhysRevB.60.R11265

M3 - Article

AN - SCOPUS:0001703736

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JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 16

ER -

Ultrafast electron-phonon scattering in semiconductors studied by nondegenerate four-wave mixing

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