Ultrafast electron-phonon scattering in semiconductors studied by nondegenerate four-wave mixing

M. Betz, G. Göger, A. Leitenstorfer, K. Ortner, C. R. Becker, G. Böhm, A. Laubereau

Research output: Contribution to journalArticlepeer-review

32 Scopus citations

Abstract

Nondegenerate four-wave-mixing allows one to monitor the femtosecond relaxation of free carriers in GaAs and CdTe at densities as low as 2×1015 cm-3. The energy relaxation time of electrons via LO-phonon emission is determined to be 240±20 fs in GaAs. In more polar CdTe, this time constant is found to be as short as 70±15 fs which is even shorter than the phonon oscillation period of 200 fs.

Original languageEnglish
Pages (from-to)R11265-R11268
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume60
Issue number16
DOIs
StatePublished - 1999

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