Abstract
Femtosecond study of the hole relaxation after resonant intersubband excitation in a quasi-two-dimensional semiconductor was carried out. Midinfrared pump-probe studies on p-types Si0.5Ge0.5/Si multiple quantum wells revealed an intersubband relaxation time of 250 fs from the second heavy-hole back to the first heavy-hole subband.
| Original language | English |
|---|---|
| Pages (from-to) | 1122-1125 |
| Number of pages | 4 |
| Journal | Physical Review Letters |
| Volume | 86 |
| Issue number | 6 |
| DOIs | |
| State | Published - 5 Feb 2001 |
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