Ultra low-voltage MOSFET-only switched-Opamp ΣΔ modulators using depletion-mode MOS-capacitors

Thomas Tille; Jens Sauerbrey; Roland Thewes; Doris Schmitt-Landsiedel

Ultra low-voltage MOSFET-only switched-Opamp ΣΔ modulators using depletion-mode MOS-capacitors

Thomas Tille
, Jens Sauerbrey
, Roland Thewes
, Doris Schmitt-Landsiedel

Medicine and Health

Technical University of Munich
Infineon Technologies AG

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

Four implementations of MOSFET-Only ΣΔ modulators for audio applications are presented using different topologies of depletion-mode MOS-capacitors. The 2nd-order fully-differential modulators are realized in Switched-Opamp technique with DC level shift. Implementation is performed in a standard 0.18μm digital n-well CMOS process without using extra process options to provide linear capacitors. The SNDRs of the different modulators are within the range of 62dB to 67dB whereas SNR of 69dB and a dynamic range of 73dB is obtained, respectively. The modulators are operated at 16kHz signal bandwidth and consume approximately 200μW from a single 0.9V power supply.

Original language	English
Article number	1471595
Pages (from-to)	587-590
Number of pages	4
Journal	European Solid-State Circuits Conference
State	Published - 2002
Event	28th European Solid-State Circuits Conference, ESSCIRC 2002 - Florence, Italy Duration: 24 Sep 2002 → 26 Sep 2002

Cite this

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title = "Ultra low-voltage MOSFET-only switched-Opamp ΣΔ modulators using depletion-mode MOS-capacitors",

abstract = "Four implementations of MOSFET-Only ΣΔ modulators for audio applications are presented using different topologies of depletion-mode MOS-capacitors. The 2nd-order fully-differential modulators are realized in Switched-Opamp technique with DC level shift. Implementation is performed in a standard 0.18μm digital n-well CMOS process without using extra process options to provide linear capacitors. The SNDRs of the different modulators are within the range of 62dB to 67dB whereas SNR of 69dB and a dynamic range of 73dB is obtained, respectively. The modulators are operated at 16kHz signal bandwidth and consume approximately 200μW from a single 0.9V power supply.",

author = "Thomas Tille and Jens Sauerbrey and Roland Thewes and Doris Schmitt-Landsiedel",

year = "2002",

language = "English",

pages = "587--590",

journal = "European Solid-State Circuits Conference",

issn = "1930-8833",

publisher = "IEEE Computer Society",

note = "28th European Solid-State Circuits Conference, ESSCIRC 2002 ; Conference date: 24-09-2002 Through 26-09-2002",

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TY - JOUR

T1 - Ultra low-voltage MOSFET-only switched-Opamp ΣΔ modulators using depletion-mode MOS-capacitors

AU - Tille, Thomas

AU - Sauerbrey, Jens

AU - Thewes, Roland

AU - Schmitt-Landsiedel, Doris

PY - 2002

Y1 - 2002

N2 - Four implementations of MOSFET-Only ΣΔ modulators for audio applications are presented using different topologies of depletion-mode MOS-capacitors. The 2nd-order fully-differential modulators are realized in Switched-Opamp technique with DC level shift. Implementation is performed in a standard 0.18μm digital n-well CMOS process without using extra process options to provide linear capacitors. The SNDRs of the different modulators are within the range of 62dB to 67dB whereas SNR of 69dB and a dynamic range of 73dB is obtained, respectively. The modulators are operated at 16kHz signal bandwidth and consume approximately 200μW from a single 0.9V power supply.

AB - Four implementations of MOSFET-Only ΣΔ modulators for audio applications are presented using different topologies of depletion-mode MOS-capacitors. The 2nd-order fully-differential modulators are realized in Switched-Opamp technique with DC level shift. Implementation is performed in a standard 0.18μm digital n-well CMOS process without using extra process options to provide linear capacitors. The SNDRs of the different modulators are within the range of 62dB to 67dB whereas SNR of 69dB and a dynamic range of 73dB is obtained, respectively. The modulators are operated at 16kHz signal bandwidth and consume approximately 200μW from a single 0.9V power supply.

UR - https://www.scopus.com/pages/publications/34547323846

M3 - Conference article

AN - SCOPUS:34547323846

SN - 1930-8833

SP - 587

EP - 590

JO - European Solid-State Circuits Conference

JF - European Solid-State Circuits Conference

M1 - 1471595

T2 - 28th European Solid-State Circuits Conference, ESSCIRC 2002

Y2 - 24 September 2002 through 26 September 2002

ER -

Ultra low-voltage MOSFET-only switched-Opamp ΣΔ modulators using depletion-mode MOS-capacitors

Abstract

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