Ultra-low-threshold GaSb-based laser diodes at 2.65 μm

K. Kashani-Shirazi, A. Bachmann, S. Arafin, K. Vizbaras, M. C. Amann

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We present the design and results of a continuous wave room temperature operating GaSb-based edge emitter at 2.65 μm with threshold current densities as low as 50 A/cm2 (L ®¥).

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics, CLEO 2009
StatePublished - 2009
EventConference on Lasers and Electro-Optics, CLEO 2009 - Baltimore, MD, United States
Duration: 31 May 20095 Jun 2009

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceConference on Lasers and Electro-Optics, CLEO 2009
Country/TerritoryUnited States
CityBaltimore, MD
Period31/05/095/06/09

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