Ultra-low resistive GaSb/InAs tunnel junctions

Kristijonas Vizbaras; Marcel Törpe; Shamsul Arafin; Markus Christian Amann

doi:10.1088/0268-1242/26/7/075021

Ultra-low resistive GaSb/InAs tunnel junctions

Kristijonas Vizbaras
, Marcel Törpe
, Shamsul Arafin
, Markus Christian Amann

Chair of Semiconductor Technology

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

The GaSb and InAs(Sb) material combination results in a type-III (broken gap) band alignment and is of particular interest for use as an ohmic, low-resistive intra-cavity contact in complex optoelectronic devices, such as buried-tunnel-junction vertical-cavity surface-emitting lasers. In this work, we report electrical characteristics of MBE-grown p⁺-GaSb/n ⁺-InAs tunnel junctions. The investigated structures exhibit ultra-low resistive behavior, yielding specific resistivity values below 2.8 × 10^-7Ω cm². This value is nearly ten times better than previously reported best values.

Original language	English
Article number	075021
Journal	Semiconductor Science and Technology
Volume	26
Issue number	7
DOIs	https://doi.org/10.1088/0268-1242/26/7/075021
State	Published - 7 Jul 2011

Access to Document

10.1088/0268-1242/26/7/075021

Cite this

@article{b70823d05ab84db9b2b4301e8cc6e95f,

title = "Ultra-low resistive GaSb/InAs tunnel junctions",

abstract = "The GaSb and InAs(Sb) material combination results in a type-III (broken gap) band alignment and is of particular interest for use as an ohmic, low-resistive intra-cavity contact in complex optoelectronic devices, such as buried-tunnel-junction vertical-cavity surface-emitting lasers. In this work, we report electrical characteristics of MBE-grown p+-GaSb/n +-InAs tunnel junctions. The investigated structures exhibit ultra-low resistive behavior, yielding specific resistivity values below 2.8 × 10-7Ω cm2. This value is nearly ten times better than previously reported best values.",

author = "Kristijonas Vizbaras and Marcel T{\"o}rpe and Shamsul Arafin and Amann, \{Markus Christian\}",

year = "2011",

month = jul,

day = "7",

doi = "10.1088/0268-1242/26/7/075021",

language = "English",

volume = "26",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "7",

}

TY - JOUR

T1 - Ultra-low resistive GaSb/InAs tunnel junctions

AU - Vizbaras, Kristijonas

AU - Törpe, Marcel

AU - Arafin, Shamsul

AU - Amann, Markus Christian

PY - 2011/7/7

Y1 - 2011/7/7

N2 - The GaSb and InAs(Sb) material combination results in a type-III (broken gap) band alignment and is of particular interest for use as an ohmic, low-resistive intra-cavity contact in complex optoelectronic devices, such as buried-tunnel-junction vertical-cavity surface-emitting lasers. In this work, we report electrical characteristics of MBE-grown p+-GaSb/n +-InAs tunnel junctions. The investigated structures exhibit ultra-low resistive behavior, yielding specific resistivity values below 2.8 × 10-7Ω cm2. This value is nearly ten times better than previously reported best values.

AB - The GaSb and InAs(Sb) material combination results in a type-III (broken gap) band alignment and is of particular interest for use as an ohmic, low-resistive intra-cavity contact in complex optoelectronic devices, such as buried-tunnel-junction vertical-cavity surface-emitting lasers. In this work, we report electrical characteristics of MBE-grown p+-GaSb/n +-InAs tunnel junctions. The investigated structures exhibit ultra-low resistive behavior, yielding specific resistivity values below 2.8 × 10-7Ω cm2. This value is nearly ten times better than previously reported best values.

UR - https://www.scopus.com/pages/publications/79956220391

U2 - 10.1088/0268-1242/26/7/075021

DO - 10.1088/0268-1242/26/7/075021

M3 - Article

AN - SCOPUS:79956220391

SN - 0268-1242

VL - 26

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 7

M1 - 075021

ER -

Ultra-low resistive GaSb/InAs tunnel junctions

Abstract

Access to Document

Other files and links

Fingerprint

Cite this