TY - JOUR
T1 - Ultra-low resistive GaSb/InAs tunnel junctions
AU - Vizbaras, Kristijonas
AU - Törpe, Marcel
AU - Arafin, Shamsul
AU - Amann, Markus Christian
PY - 2011/7/7
Y1 - 2011/7/7
N2 - The GaSb and InAs(Sb) material combination results in a type-III (broken gap) band alignment and is of particular interest for use as an ohmic, low-resistive intra-cavity contact in complex optoelectronic devices, such as buried-tunnel-junction vertical-cavity surface-emitting lasers. In this work, we report electrical characteristics of MBE-grown p+-GaSb/n +-InAs tunnel junctions. The investigated structures exhibit ultra-low resistive behavior, yielding specific resistivity values below 2.8 × 10-7Ω cm2. This value is nearly ten times better than previously reported best values.
AB - The GaSb and InAs(Sb) material combination results in a type-III (broken gap) band alignment and is of particular interest for use as an ohmic, low-resistive intra-cavity contact in complex optoelectronic devices, such as buried-tunnel-junction vertical-cavity surface-emitting lasers. In this work, we report electrical characteristics of MBE-grown p+-GaSb/n +-InAs tunnel junctions. The investigated structures exhibit ultra-low resistive behavior, yielding specific resistivity values below 2.8 × 10-7Ω cm2. This value is nearly ten times better than previously reported best values.
UR - http://www.scopus.com/inward/record.url?scp=79956220391&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/26/7/075021
DO - 10.1088/0268-1242/26/7/075021
M3 - Article
AN - SCOPUS:79956220391
SN - 0268-1242
VL - 26
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
IS - 7
M1 - 075021
ER -