TY - GEN
T1 - Ultra-low inductive power module design with integrated common mode noise shielding
AU - Huber, Thomas
AU - Kleimaier, Alexander
AU - Kennel, Ralph
N1 - Publisher Copyright:
© assigned jointly to the European Power Electronics and Drives Association & the Institute of Electrical and Electronics Engineers (IEEE)
PY - 2017/11/6
Y1 - 2017/11/6
N2 - A new ultra-low inductive 600 V / 200 A half-bridge power module, called LinkPack module, with integrated DC-link capacitors and common mode EMI shielding was realised. LinkPack module contains intentionally SiC-Mosfets, however it is also possible to equip Si-IGBTs and Si-diodes respectively SiC-diodes. This allows the realisation of full SiC-Mosfets modules, hybrid SiC modules and Si-IGBT / Si-diodes modules. The goal of this research was a significantly improved switching performance by reducing the power loop inductance in order to reduce switching losses and increasing efficiency. Integration of a common mode EMI shielding is a another very important aspect of the module design, which will be topic of this paper. LinkPack modules are intended to be driven at high switching frequencies of 20 kHz and more. Raising the switching frequency causes an increase of common mode noise spectrum level. So an effective EMI shielding is mandatory to avoid additional, large sized common mode filter devices. Measurements revealed an improved switching performance and less switching process oscillations. Turn-off speed is increased by factor 1.6, and simultaneously the common mode noise level can be significantly reduced up to 25 dBμV in a wide frequency range compared to corresponding conventional reference module design.
AB - A new ultra-low inductive 600 V / 200 A half-bridge power module, called LinkPack module, with integrated DC-link capacitors and common mode EMI shielding was realised. LinkPack module contains intentionally SiC-Mosfets, however it is also possible to equip Si-IGBTs and Si-diodes respectively SiC-diodes. This allows the realisation of full SiC-Mosfets modules, hybrid SiC modules and Si-IGBT / Si-diodes modules. The goal of this research was a significantly improved switching performance by reducing the power loop inductance in order to reduce switching losses and increasing efficiency. Integration of a common mode EMI shielding is a another very important aspect of the module design, which will be topic of this paper. LinkPack modules are intended to be driven at high switching frequencies of 20 kHz and more. Raising the switching frequency causes an increase of common mode noise spectrum level. So an effective EMI shielding is mandatory to avoid additional, large sized common mode filter devices. Measurements revealed an improved switching performance and less switching process oscillations. Turn-off speed is increased by factor 1.6, and simultaneously the common mode noise level can be significantly reduced up to 25 dBμV in a wide frequency range compared to corresponding conventional reference module design.
KW - Design
KW - EMC/EMI
KW - Power semiconductor device
KW - Silicon Carbide (SiC)
KW - Wide bandgap devices
UR - http://www.scopus.com/inward/record.url?scp=85042156014&partnerID=8YFLogxK
U2 - 10.23919/EPE17ECCEEurope.2017.8098946
DO - 10.23919/EPE17ECCEEurope.2017.8098946
M3 - Conference contribution
AN - SCOPUS:85042156014
T3 - 2017 19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe
BT - 2017 19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe
Y2 - 11 September 2017 through 14 September 2017
ER -