Type-II InP-based lasers emitting at 2.55 μm

Stephan Sprengel; Alexander Andrejew; Kristijonas Vizbaras; Tobias Gruendl; Kathrin Geiger; Gerhard Boehm; Christian Grasse; Markus Christian Amann

doi:10.1063/1.3679378

Type-II InP-based lasers emitting at 2.55 μm

Stephan Sprengel
, Alexander Andrejew
, Kristijonas Vizbaras
, Tobias Gruendl
, Kathrin Geiger
, Gerhard Boehm
, Christian Grasse
, Markus Christian Amann

Chair of Semiconductor Technology

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

45 Scopus citations

Abstract

Room-temperature lasing at 2.55 m is reported for InP-based GaInAs/GaAsSb type-II quantum well lasers in pulsed mode up to 42 °C. This record long-wavelength lasing has become feasible by implementing compressive strain in both materials and a carrier confinement design using an AlAsSb/AlGaInAs electron/hole blocking layer. The device concept appears promising for extending the wavelength range further towards 3 m.

Original language	English
Article number	041109
Journal	Applied Physics Letters
Volume	100
Issue number	4
DOIs	https://doi.org/10.1063/1.3679378
State	Published - 23 Jan 2012

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10.1063/1.3679378

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title = "Type-II InP-based lasers emitting at 2.55 μm",

abstract = "Room-temperature lasing at 2.55 m is reported for InP-based GaInAs/GaAsSb type-II quantum well lasers in pulsed mode up to 42 °C. This record long-wavelength lasing has become feasible by implementing compressive strain in both materials and a carrier confinement design using an AlAsSb/AlGaInAs electron/hole blocking layer. The device concept appears promising for extending the wavelength range further towards 3 m.",

author = "Stephan Sprengel and Alexander Andrejew and Kristijonas Vizbaras and Tobias Gruendl and Kathrin Geiger and Gerhard Boehm and Christian Grasse and Amann, \{Markus Christian\}",

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T1 - Type-II InP-based lasers emitting at 2.55 μm

AU - Sprengel, Stephan

AU - Andrejew, Alexander

AU - Vizbaras, Kristijonas

AU - Gruendl, Tobias

AU - Geiger, Kathrin

AU - Boehm, Gerhard

AU - Grasse, Christian

AU - Amann, Markus Christian

PY - 2012/1/23

Y1 - 2012/1/23

N2 - Room-temperature lasing at 2.55 m is reported for InP-based GaInAs/GaAsSb type-II quantum well lasers in pulsed mode up to 42 °C. This record long-wavelength lasing has become feasible by implementing compressive strain in both materials and a carrier confinement design using an AlAsSb/AlGaInAs electron/hole blocking layer. The device concept appears promising for extending the wavelength range further towards 3 m.

AB - Room-temperature lasing at 2.55 m is reported for InP-based GaInAs/GaAsSb type-II quantum well lasers in pulsed mode up to 42 °C. This record long-wavelength lasing has become feasible by implementing compressive strain in both materials and a carrier confinement design using an AlAsSb/AlGaInAs electron/hole blocking layer. The device concept appears promising for extending the wavelength range further towards 3 m.

UR - https://www.scopus.com/pages/publications/84856413922

U2 - 10.1063/1.3679378

DO - 10.1063/1.3679378

M3 - Article

AN - SCOPUS:84856413922

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 041109

ER -

Type-II InP-based lasers emitting at 2.55 μm

Abstract

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