Two-dimensional numerical modeling of dual-collector magnetotransistors: Evidence for emitter efficiency modulation

C. Riccobene; G. Wachutka; J. Bürgler; H. Baltes

doi:10.1016/0924-4247(92)80106-D

Two-dimensional numerical modeling of dual-collector magnetotransistors: Evidence for emitter efficiency modulation

C. Riccobene
, G. Wachutka
, J. Bürgler
, H. Baltes

ETH Zürich

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We studied the galvanomagnetic carrier transport in magnetic-field-sensitive integrated bipolar transistors by means of exact two-dimensional numerical simulation. The devices considered are dual-collector magnetotransistors as obtained by industrial bipolar IC technology. In contrast to previous work, the complete device structure in its full extension has been modeled. Our simulations clearly demonstrate that in this device type, apart from Lorentz deflection in the collector zone, it is essentially the much disputed emitter injection modulation effect which is decisive for the sensor response.

Original language	English
Pages (from-to)	210-214
Number of pages	5
Journal	Sensors and Actuators, A: Physical
Volume	31
Issue number	1-3
DOIs	https://doi.org/10.1016/0924-4247(92)80106-D
State	Published - Mar 1992
Externally published	Yes

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title = "Two-dimensional numerical modeling of dual-collector magnetotransistors: Evidence for emitter efficiency modulation",

abstract = "We studied the galvanomagnetic carrier transport in magnetic-field-sensitive integrated bipolar transistors by means of exact two-dimensional numerical simulation. The devices considered are dual-collector magnetotransistors as obtained by industrial bipolar IC technology. In contrast to previous work, the complete device structure in its full extension has been modeled. Our simulations clearly demonstrate that in this device type, apart from Lorentz deflection in the collector zone, it is essentially the much disputed emitter injection modulation effect which is decisive for the sensor response.",

author = "C. Riccobene and G. Wachutka and J. B{\"u}rgler and H. Baltes",

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AU - Wachutka, G.

AU - Bürgler, J.

AU - Baltes, H.

PY - 1992/3

Y1 - 1992/3

N2 - We studied the galvanomagnetic carrier transport in magnetic-field-sensitive integrated bipolar transistors by means of exact two-dimensional numerical simulation. The devices considered are dual-collector magnetotransistors as obtained by industrial bipolar IC technology. In contrast to previous work, the complete device structure in its full extension has been modeled. Our simulations clearly demonstrate that in this device type, apart from Lorentz deflection in the collector zone, it is essentially the much disputed emitter injection modulation effect which is decisive for the sensor response.

AB - We studied the galvanomagnetic carrier transport in magnetic-field-sensitive integrated bipolar transistors by means of exact two-dimensional numerical simulation. The devices considered are dual-collector magnetotransistors as obtained by industrial bipolar IC technology. In contrast to previous work, the complete device structure in its full extension has been modeled. Our simulations clearly demonstrate that in this device type, apart from Lorentz deflection in the collector zone, it is essentially the much disputed emitter injection modulation effect which is decisive for the sensor response.

UR - https://www.scopus.com/pages/publications/0026835703

U2 - 10.1016/0924-4247(92)80106-D

DO - 10.1016/0924-4247(92)80106-D

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AN - SCOPUS:0026835703

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JO - Sensors and Actuators, A: Physical

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ER -

Two-dimensional numerical modeling of dual-collector magnetotransistors: Evidence for emitter efficiency modulation

Abstract

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