Two-dimensional excitons in siloxene

M. S. Brandt; M. Rosenbauer; M. Stutzmann

doi:10.1557/proc-298-301

Two-dimensional excitons in siloxene

M. S. Brandt
, M. Rosenbauer
, M. Stutzmann

PARC

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

10 Scopus citations

Abstract

The luminescence properties of two different modifications of siloxene are studied with photo-luminescence excitation spectroscopy (PLE) and optically detected magnetic resonance (ODMR). The luminescence of as prepared siloxene, which consists of isolated silicon planes, is resonantly excited at the bandgap, indicating a direct bandstructure. The observation of Δm = ±2 transitions in ODMR shows that triplet excitons contribute to the luminescence process. In contrast, annealed siloxene consisting primarily of six-membered silicon rings shows a PLE typical of a material with an indirect bandgap. The ODMR signal of annealed siloxene and of porous silicon show the same Gaussian line with a typical width of 400 G, which can arise from strong dipolar coupling of an electron and a hole ≈ 5 angstrom apart.

Original language	English
Title of host publication	Materials Research Society Symposium Proceedings
Publisher	Publ by Materials Research Society
Pages	301-306
Number of pages	6
ISBN (Print)	1558991948, 9781558991941
DOIs	https://doi.org/10.1557/proc-298-301
State	Published - 1993
Externally published	Yes
Event	Proceedings of the Symposium on Silicon-Based Optoelectronic Materials - San Francisco, CA, USA Duration: 12 Apr 1993 → 14 Apr 1993

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	298
ISSN (Print)	0272-9172

Conference

Conference	Proceedings of the Symposium on Silicon-Based Optoelectronic Materials
City	San Francisco, CA, USA
Period	12/04/93 → 14/04/93

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10.1557/proc-298-301

Cite this

@inproceedings{0d97d2cb03124983b6bdae40c92553da,

title = "Two-dimensional excitons in siloxene",

abstract = "The luminescence properties of two different modifications of siloxene are studied with photo-luminescence excitation spectroscopy (PLE) and optically detected magnetic resonance (ODMR). The luminescence of as prepared siloxene, which consists of isolated silicon planes, is resonantly excited at the bandgap, indicating a direct bandstructure. The observation of Δm = ±2 transitions in ODMR shows that triplet excitons contribute to the luminescence process. In contrast, annealed siloxene consisting primarily of six-membered silicon rings shows a PLE typical of a material with an indirect bandgap. The ODMR signal of annealed siloxene and of porous silicon show the same Gaussian line with a typical width of 400 G, which can arise from strong dipolar coupling of an electron and a hole ≈ 5 angstrom apart.",

author = "Brandt, \{M. S.\} and M. Rosenbauer and M. Stutzmann",

year = "1993",

doi = "10.1557/proc-298-301",

language = "English",

isbn = "1558991948",

series = "Materials Research Society Symposium Proceedings",

publisher = "Publ by Materials Research Society",

pages = "301--306",

booktitle = "Materials Research Society Symposium Proceedings",

note = "Proceedings of the Symposium on Silicon-Based Optoelectronic Materials ; Conference date: 12-04-1993 Through 14-04-1993",

}

Brandt, MS, Rosenbauer, M & Stutzmann, M 1993, Two-dimensional excitons in siloxene. in Materials Research Society Symposium Proceedings. Materials Research Society Symposium Proceedings, vol. 298, Publ by Materials Research Society, pp. 301-306, Proceedings of the Symposium on Silicon-Based Optoelectronic Materials, San Francisco, CA, USA, 12/04/93. https://doi.org/10.1557/proc-298-301

TY - GEN

T1 - Two-dimensional excitons in siloxene

AU - Brandt, M. S.

AU - Rosenbauer, M.

AU - Stutzmann, M.

PY - 1993

Y1 - 1993

N2 - The luminescence properties of two different modifications of siloxene are studied with photo-luminescence excitation spectroscopy (PLE) and optically detected magnetic resonance (ODMR). The luminescence of as prepared siloxene, which consists of isolated silicon planes, is resonantly excited at the bandgap, indicating a direct bandstructure. The observation of Δm = ±2 transitions in ODMR shows that triplet excitons contribute to the luminescence process. In contrast, annealed siloxene consisting primarily of six-membered silicon rings shows a PLE typical of a material with an indirect bandgap. The ODMR signal of annealed siloxene and of porous silicon show the same Gaussian line with a typical width of 400 G, which can arise from strong dipolar coupling of an electron and a hole ≈ 5 angstrom apart.

AB - The luminescence properties of two different modifications of siloxene are studied with photo-luminescence excitation spectroscopy (PLE) and optically detected magnetic resonance (ODMR). The luminescence of as prepared siloxene, which consists of isolated silicon planes, is resonantly excited at the bandgap, indicating a direct bandstructure. The observation of Δm = ±2 transitions in ODMR shows that triplet excitons contribute to the luminescence process. In contrast, annealed siloxene consisting primarily of six-membered silicon rings shows a PLE typical of a material with an indirect bandgap. The ODMR signal of annealed siloxene and of porous silicon show the same Gaussian line with a typical width of 400 G, which can arise from strong dipolar coupling of an electron and a hole ≈ 5 angstrom apart.

UR - https://www.scopus.com/pages/publications/0027837402

U2 - 10.1557/proc-298-301

DO - 10.1557/proc-298-301

M3 - Conference contribution

AN - SCOPUS:0027837402

SN - 1558991948

SN - 9781558991941

T3 - Materials Research Society Symposium Proceedings

SP - 301

EP - 306

BT - Materials Research Society Symposium Proceedings

PB - Publ by Materials Research Society

T2 - Proceedings of the Symposium on Silicon-Based Optoelectronic Materials

Y2 - 12 April 1993 through 14 April 1993

ER -

Two-dimensional excitons in siloxene

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