Two-dimensional excitons in siloxene

M. S. Brandt, M. Rosenbauer, M. Stutzmann

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

10 Scopus citations

Abstract

The luminescence properties of two different modifications of siloxene are studied with photo-luminescence excitation spectroscopy (PLE) and optically detected magnetic resonance (ODMR). The luminescence of as prepared siloxene, which consists of isolated silicon planes, is resonantly excited at the bandgap, indicating a direct bandstructure. The observation of Δm = ±2 transitions in ODMR shows that triplet excitons contribute to the luminescence process. In contrast, annealed siloxene consisting primarily of six-membered silicon rings shows a PLE typical of a material with an indirect bandgap. The ODMR signal of annealed siloxene and of porous silicon show the same Gaussian line with a typical width of 400 G, which can arise from strong dipolar coupling of an electron and a hole ≈ 5 angstrom apart.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
PublisherPubl by Materials Research Society
Pages301-306
Number of pages6
ISBN (Print)1558991948, 9781558991941
DOIs
StatePublished - 1993
Externally publishedYes
EventProceedings of the Symposium on Silicon-Based Optoelectronic Materials - San Francisco, CA, USA
Duration: 12 Apr 199314 Apr 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume298
ISSN (Print)0272-9172

Conference

ConferenceProceedings of the Symposium on Silicon-Based Optoelectronic Materials
CitySan Francisco, CA, USA
Period12/04/9314/04/93

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