Two-dimensional electron systems in Si/SixGe1-x strained-layer superlattices

G. Abstreiter; H. Brugger; T. Wolf; H. Jorke; H. J. Herzog

doi:10.1016/0039-6028(86)90485-1

Two-dimensional electron systems in Si/Si_xGe_1-x strained-layer superlattices

G. Abstreiter
, H. Brugger
, T. Wolf
, H. Jorke
, H. J. Herzog

TUM Emeriti of Excellence

Technical University of Munich
AEG

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

We report on observations of two-dimensional electron systems in selectively doped Si/Si_0.5Ge_0.5 strained-layer superlattices. Phonon Raman spectroscopy is used to determine the built-in strain and the crystal structure. Hall measurements show low-temperature mobility enhancement. The ordering of the electronic bands is strongly affected by the built-in strain.

Original language	English
Pages (from-to)	640-645
Number of pages	6
Journal	Surface Science
Volume	174
Issue number	1-3
DOIs	https://doi.org/10.1016/0039-6028(86)90485-1
State	Published - 3 Aug 1986

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10.1016/0039-6028(86)90485-1

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title = "Two-dimensional electron systems in Si/SixGe1-x strained-layer superlattices",

abstract = "We report on observations of two-dimensional electron systems in selectively doped Si/Si0.5Ge0.5 strained-layer superlattices. Phonon Raman spectroscopy is used to determine the built-in strain and the crystal structure. Hall measurements show low-temperature mobility enhancement. The ordering of the electronic bands is strongly affected by the built-in strain.",

author = "G. Abstreiter and H. Brugger and T. Wolf and H. Jorke and Herzog, \{H. J.\}",

year = "1986",

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journal = "Surface Science",

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T1 - Two-dimensional electron systems in Si/SixGe1-x strained-layer superlattices

AU - Abstreiter, G.

AU - Brugger, H.

AU - Wolf, T.

AU - Jorke, H.

AU - Herzog, H. J.

PY - 1986/8/3

Y1 - 1986/8/3

N2 - We report on observations of two-dimensional electron systems in selectively doped Si/Si0.5Ge0.5 strained-layer superlattices. Phonon Raman spectroscopy is used to determine the built-in strain and the crystal structure. Hall measurements show low-temperature mobility enhancement. The ordering of the electronic bands is strongly affected by the built-in strain.

AB - We report on observations of two-dimensional electron systems in selectively doped Si/Si0.5Ge0.5 strained-layer superlattices. Phonon Raman spectroscopy is used to determine the built-in strain and the crystal structure. Hall measurements show low-temperature mobility enhancement. The ordering of the electronic bands is strongly affected by the built-in strain.

UR - https://www.scopus.com/pages/publications/32844455059

U2 - 10.1016/0039-6028(86)90485-1

DO - 10.1016/0039-6028(86)90485-1

M3 - Article

AN - SCOPUS:32844455059

SN - 0039-6028

VL - 174

SP - 640

EP - 645

JO - Surface Science

JF - Surface Science

IS - 1-3

ER -

Two-dimensional electron systems in Si/Si_xGe_1-x strained-layer superlattices

Abstract

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