Two-dimensional electron gas effects on the photoluminescence from a nonintentionally doped AlGaN/GaN heterojunction

G. Martinez-Criado; A. Cros; A. Cantarero; U. Karrer; O. Ambacher; C. R. Miskys; M. Stutzmann

doi:10.1002/pssc.200390070

Two-dimensional electron gas effects on the photoluminescence from a nonintentionally doped AlGaN/GaN heterojunction

G. Martinez-Criado, A. Cros, A. Cantarero, U. Karrer, O. Ambacher, C. R. Miskys, M. Stutzmann

TUM Emeriti of Excellence

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Photoluminescence measurements on an AlGaN/GaN single heterojunction (SH), where piezoelectric and spontaneous polarization effects confine a two-dimensional electron gas (2DEG), are presented. Well-defined emissions between the bulk excitonic transitions and their LO-phonon replica are attributed to spatially indirect excitons located close to the interface. The strong interfacial electric field separates photogenerated holes and electrons, weakening their Coulomb interaction and causing a blueshift with increasing excitation intensity due to carrier population effects. In addition, direct experimental proof is obtained by applying an electric field normal to the interface. An energy shift of the quasi-2D excitons accompanied by an intensity quenching as a function of the gate voltage corroborates their nature.

Original language	English
Pages (from-to)	392-396
Number of pages	5
Journal	Physica Status Solidi C: Conferences
Issue number	1
DOIs	https://doi.org/10.1002/pssc.200390070
State	Published - 1 Dec 2002
Event	2nd International Workshop on Nitride Semiconductors, IWN 2002 - Aachen, Germany Duration: 22 Jul 2002 → 25 Jul 2002

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title = "Two-dimensional electron gas effects on the photoluminescence from a nonintentionally doped AlGaN/GaN heterojunction",

abstract = "Photoluminescence measurements on an AlGaN/GaN single heterojunction (SH), where piezoelectric and spontaneous polarization effects confine a two-dimensional electron gas (2DEG), are presented. Well-defined emissions between the bulk excitonic transitions and their LO-phonon replica are attributed to spatially indirect excitons located close to the interface. The strong interfacial electric field separates photogenerated holes and electrons, weakening their Coulomb interaction and causing a blueshift with increasing excitation intensity due to carrier population effects. In addition, direct experimental proof is obtained by applying an electric field normal to the interface. An energy shift of the quasi-2D excitons accompanied by an intensity quenching as a function of the gate voltage corroborates their nature.",

author = "G. Martinez-Criado and A. Cros and A. Cantarero and U. Karrer and O. Ambacher and Miskys, {C. R.} and M. Stutzmann",

year = "2002",

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pages = "392--396",

journal = "Physica Status Solidi C: Conferences",

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TY - JOUR

T1 - Two-dimensional electron gas effects on the photoluminescence from a nonintentionally doped AlGaN/GaN heterojunction

AU - Martinez-Criado, G.

AU - Cros, A.

AU - Cantarero, A.

AU - Karrer, U.

AU - Ambacher, O.

AU - Miskys, C. R.

AU - Stutzmann, M.

PY - 2002/12/1

Y1 - 2002/12/1

N2 - Photoluminescence measurements on an AlGaN/GaN single heterojunction (SH), where piezoelectric and spontaneous polarization effects confine a two-dimensional electron gas (2DEG), are presented. Well-defined emissions between the bulk excitonic transitions and their LO-phonon replica are attributed to spatially indirect excitons located close to the interface. The strong interfacial electric field separates photogenerated holes and electrons, weakening their Coulomb interaction and causing a blueshift with increasing excitation intensity due to carrier population effects. In addition, direct experimental proof is obtained by applying an electric field normal to the interface. An energy shift of the quasi-2D excitons accompanied by an intensity quenching as a function of the gate voltage corroborates their nature.

AB - Photoluminescence measurements on an AlGaN/GaN single heterojunction (SH), where piezoelectric and spontaneous polarization effects confine a two-dimensional electron gas (2DEG), are presented. Well-defined emissions between the bulk excitonic transitions and their LO-phonon replica are attributed to spatially indirect excitons located close to the interface. The strong interfacial electric field separates photogenerated holes and electrons, weakening their Coulomb interaction and causing a blueshift with increasing excitation intensity due to carrier population effects. In addition, direct experimental proof is obtained by applying an electric field normal to the interface. An energy shift of the quasi-2D excitons accompanied by an intensity quenching as a function of the gate voltage corroborates their nature.

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U2 - 10.1002/pssc.200390070

DO - 10.1002/pssc.200390070

M3 - Conference article

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SN - 1610-1634

SP - 392

EP - 396

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 1

T2 - 2nd International Workshop on Nitride Semiconductors, IWN 2002

Y2 - 22 July 2002 through 25 July 2002

ER -

Two-dimensional electron gas effects on the photoluminescence from a nonintentionally doped AlGaN/GaN heterojunction

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