Two-dimensional Charge Carrier Systems for Chemical Sensors: AlGaN/GaN and Diamond

Martin Stutzmann; Jose Antonio Garrido; Martin Eickhoff

Two-dimensional Charge Carrier Systems for Chemical Sensors: AlGaN/GaN and Diamond

Martin Stutzmann, Jose Antonio Garrido, Martin Eickhoff

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Walter Schottky Institut

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Abstract

The use of spontaneously formed two-dimensional electron and hole gases at AlGaN/GaN hetero-interfaces and at the surface of hydrogen-terminated diamond for novel sensor devices is reviewed. The physical origin of these two-dimensional carrier systems is briefly described and recent results concerning their interaction with ions and gases are outlined. In both cases, a controlled oxidation of the exposed surface turns out to be important for an optimum sensor operation.

Original language	English
Pages	1153-1158
Number of pages	6
State	Published - 2003
Event	Second IEEE International Conference on Sensors: IEEE Sensors 2003 - Toronto, Ont., Canada Duration: 22 Oct 2003 → 24 Oct 2003

Conference

Conference	Second IEEE International Conference on Sensors: IEEE Sensors 2003
Country/Territory	Canada
City	Toronto, Ont.
Period	22/10/03 → 24/10/03

Keywords

GaN/AlGaN
Hydrogen-terminated diamond
Surface oxides
Two-dimensional carrier gases

Cite this

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title = "Two-dimensional Charge Carrier Systems for Chemical Sensors: AlGaN/GaN and Diamond",

abstract = "The use of spontaneously formed two-dimensional electron and hole gases at AlGaN/GaN hetero-interfaces and at the surface of hydrogen-terminated diamond for novel sensor devices is reviewed. The physical origin of these two-dimensional carrier systems is briefly described and recent results concerning their interaction with ions and gases are outlined. In both cases, a controlled oxidation of the exposed surface turns out to be important for an optimum sensor operation.",

keywords = "GaN/AlGaN, Hydrogen-terminated diamond, Surface oxides, Two-dimensional carrier gases",

author = "Martin Stutzmann and Garrido, {Jose Antonio} and Martin Eickhoff",

year = "2003",

language = "English",

pages = "1153--1158",

note = "Second IEEE International Conference on Sensors: IEEE Sensors 2003 ; Conference date: 22-10-2003 Through 24-10-2003",

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TY - CONF

T1 - Two-dimensional Charge Carrier Systems for Chemical Sensors

T2 - Second IEEE International Conference on Sensors: IEEE Sensors 2003

AU - Stutzmann, Martin

AU - Garrido, Jose Antonio

AU - Eickhoff, Martin

PY - 2003

Y1 - 2003

N2 - The use of spontaneously formed two-dimensional electron and hole gases at AlGaN/GaN hetero-interfaces and at the surface of hydrogen-terminated diamond for novel sensor devices is reviewed. The physical origin of these two-dimensional carrier systems is briefly described and recent results concerning their interaction with ions and gases are outlined. In both cases, a controlled oxidation of the exposed surface turns out to be important for an optimum sensor operation.

AB - The use of spontaneously formed two-dimensional electron and hole gases at AlGaN/GaN hetero-interfaces and at the surface of hydrogen-terminated diamond for novel sensor devices is reviewed. The physical origin of these two-dimensional carrier systems is briefly described and recent results concerning their interaction with ions and gases are outlined. In both cases, a controlled oxidation of the exposed surface turns out to be important for an optimum sensor operation.

KW - GaN/AlGaN

KW - Hydrogen-terminated diamond

KW - Surface oxides

KW - Two-dimensional carrier gases

UR - http://www.scopus.com/inward/record.url?scp=1542363305&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:1542363305

SP - 1153

EP - 1158

Y2 - 22 October 2003 through 24 October 2003

ER -

Two-dimensional Charge Carrier Systems for Chemical Sensors: AlGaN/GaN and Diamond

Abstract

Conference

Keywords

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