Abstract
Ultrafast relaxation phenomena in self-organized InAs/AlGaAs quantum dots with ground state transition energies of 1.42 eV are analyzed with different methods of femtosecond spectroscopy. A time-correlated luminescence experiment of an ensemble of InAs islands reveals a picosecond relaxation mechanism of carriers within the quantum dots. Moreover, modifications of the quantum dot properties due to excitation of the surrounding wetting layer is found. Employing a shadow-mask technique, a structure containing only a few zero-dimensional objects is studied. Selectively creating electron-hole pairs in excited states of approximately ten quantum dots, we observe characteristic line shifts of their ground state absorption in a two-color femtosecond transmission experiment. This finding demonstrates the feasibility of ultrafast studies of single self-assembled quantum dots.
Original language | English |
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Pages (from-to) | 401-407 |
Number of pages | 7 |
Journal | Physica Status Solidi (B) Basic Research |
Volume | 233 |
Issue number | 3 |
DOIs | |
State | Published - Oct 2002 |