Tunneling and ionization phenomena in GaAs pin diodes

D. Liebig, P. Lugli, P. Vogl, M. Claassen, W. Harth

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

We present a combined theoretical and experimental analysis of breakdown phenomena in GaAs pin diodes. The measured reverse characteristics indicating a soft breakdown for intrinsic regions smaller than 50nm are nicely interpreted via a self-consistent Monte Carlo simulation which allows the separation of tunneling an ionization processes.

Original languageEnglish
Title of host publicationEuropean Solid-State Device Research Conference
EditorsHerman E. Maes, Roger J. Van Overstraeten, Robert P. Mertens
PublisherIEEE Computer Society
Pages127-130
Number of pages4
ISBN (Electronic)0444894780
StatePublished - 1992
Event22nd European Solid State Device Research Conference, ESSDERC 1992 - Leuven, Belgium
Duration: 14 Sep 199217 Sep 1992

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Conference

Conference22nd European Solid State Device Research Conference, ESSDERC 1992
Country/TerritoryBelgium
CityLeuven
Period14/09/9217/09/92

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