Tunnel junctions for ohmic intra-device contacts on GaSb-substrates

Oliver Dier, Martin Sterkel, Markus Grau, Chun Lin Chun, Christian Lauer, Markus Christian Amann

Research output: Contribution to journalArticlepeer-review

19 Scopus citations


A tunnel junction intradevice contact based on GaSb substrates was analyzed. An InAsSb homojunction shows the lowest average resistivity of 2.63×10-5 ωcm2. Annealing tests showed a strong degradation of the tunnel junctions. It was found that by including more steps into the grading and improving the thermal stability of the tunnel junction, the resistivity values may be further reduced and buried tunnel junction devices become feasible.

Original languageEnglish
Pages (from-to)2388-2389
Number of pages2
JournalApplied Physics Letters
Issue number12
StatePublished - 20 Sep 2004


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