Tunnel junctions for ohmic intra-device contacts on GaSb-substrates

Oliver Dier; Martin Sterkel; Markus Grau; Chun Lin Chun; Christian Lauer; Markus Christian Amann

doi:10.1063/1.1793349

Tunnel junctions for ohmic intra-device contacts on GaSb-substrates

Oliver Dier, Martin Sterkel, Markus Grau, Chun Lin Chun, Christian Lauer, Markus Christian Amann

Chair of Semiconductor Technology

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

A tunnel junction intradevice contact based on GaSb substrates was analyzed. An InAsSb homojunction shows the lowest average resistivity of 2.63×10^-5 ωcm². Annealing tests showed a strong degradation of the tunnel junctions. It was found that by including more steps into the grading and improving the thermal stability of the tunnel junction, the resistivity values may be further reduced and buried tunnel junction devices become feasible.

Original language	English
Pages (from-to)	2388-2389
Number of pages	2
Journal	Applied Physics Letters
Volume	85
Issue number	12
DOIs	https://doi.org/10.1063/1.1793349
State	Published - 20 Sep 2004

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abstract = "A tunnel junction intradevice contact based on GaSb substrates was analyzed. An InAsSb homojunction shows the lowest average resistivity of 2.63×10-5 ωcm2. Annealing tests showed a strong degradation of the tunnel junctions. It was found that by including more steps into the grading and improving the thermal stability of the tunnel junction, the resistivity values may be further reduced and buried tunnel junction devices become feasible.",

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AU - Dier, Oliver

AU - Sterkel, Martin

AU - Grau, Markus

AU - Lin Chun, Chun

AU - Lauer, Christian

AU - Amann, Markus Christian

PY - 2004/9/20

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N2 - A tunnel junction intradevice contact based on GaSb substrates was analyzed. An InAsSb homojunction shows the lowest average resistivity of 2.63×10-5 ωcm2. Annealing tests showed a strong degradation of the tunnel junctions. It was found that by including more steps into the grading and improving the thermal stability of the tunnel junction, the resistivity values may be further reduced and buried tunnel junction devices become feasible.

AB - A tunnel junction intradevice contact based on GaSb substrates was analyzed. An InAsSb homojunction shows the lowest average resistivity of 2.63×10-5 ωcm2. Annealing tests showed a strong degradation of the tunnel junctions. It was found that by including more steps into the grading and improving the thermal stability of the tunnel junction, the resistivity values may be further reduced and buried tunnel junction devices become feasible.

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Tunnel junctions for ohmic intra-device contacts on GaSb-substrates

Abstract

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