Tuning Lasing Emission toward Long Wavelengths in GaAs-(In,Al)GaAs Core-Multishell Nanowires

T. Stettner; A. Thurn; M. Döblinger; M. O. Hill; J. Bissinger; P. Schmiedeke; S. Matich; T. Kostenbader; D. Ruhstorfer; H. Riedl; M. Kaniber; L. J. Lauhon; J. J. Finley; G. Koblmüller

doi:10.1021/acs.nanolett.8b02503

Tuning Lasing Emission toward Long Wavelengths in GaAs-(In,Al)GaAs Core-Multishell Nanowires

T. Stettner, A. Thurn, M. Döblinger, M. O. Hill, J. Bissinger, P. Schmiedeke, S. Matich, T. Kostenbader, D. Ruhstorfer, H. Riedl, M. Kaniber, L. J. Lauhon, J. J. Finley, G. Koblmüller

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46 Scopus citations

Abstract

Semiconductor nanowire (NW) lasers are attractive as integrated on-chip coherent light sources with strong potential for applications in optical communication and sensing. Realizing lasers from individual bulk-type NWs with emission tunable from the near-infrared to the telecommunications spectral region is, however, challenging and requires low-dimensional active gain regions with an adjustable band gap and quantum confinement. Here, we demonstrate lasing from GaAs-(InGaAs/AlGaAs) core-shell NWs with multiple InGaAs quantum wells (QW) and lasing wavelengths tunable from â0.8 to â1.1 μm. Our investigation emphasizes particularly the critical interplay between QW design, growth kinetics, and the control of InGaAs composition in the active region needed for effective tuning of the lasing wavelength. A low shell growth temperature and GaAs interlayers at the QW/barrier interfaces enable In molar fractions up to â25% without plastic strain relaxation or alloy intermixing in the QWs. Correlated scanning transmission electron microscopy, atom probe tomography, and confocal PL spectroscopy analyses illustrate the high sensitivity of the optically pumped lasing characteristics on microscopic properties, providing useful guidelines for other III-V-based NW laser systems.

Original language	English
Pages (from-to)	6292-6300
Number of pages	9
Journal	Nano Letters
Volume	18
Issue number	10
DOIs	https://doi.org/10.1021/acs.nanolett.8b02503
State	Published - 10 Oct 2018

Keywords

InGaAs
Nanowire lasers
molecular beam epitaxy
monolithic III/V integration on Si
photoluminescence
quantum wells
scanning transmission electron microscopy

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10.1021/acs.nanolett.8b02503

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Stettner, T., Thurn, A., Döblinger, M., Hill, M. O., Bissinger, J., Schmiedeke, P., Matich, S., Kostenbader, T., Ruhstorfer, D., Riedl, H., Kaniber, M., Lauhon, L. J., Finley, J. J., & Koblmüller, G. (2018). Tuning Lasing Emission toward Long Wavelengths in GaAs-(In,Al)GaAs Core-Multishell Nanowires. Nano Letters, 18(10), 6292-6300. https://doi.org/10.1021/acs.nanolett.8b02503

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title = "Tuning Lasing Emission toward Long Wavelengths in GaAs-(In,Al)GaAs Core-Multishell Nanowires",

abstract = "Semiconductor nanowire (NW) lasers are attractive as integrated on-chip coherent light sources with strong potential for applications in optical communication and sensing. Realizing lasers from individual bulk-type NWs with emission tunable from the near-infrared to the telecommunications spectral region is, however, challenging and requires low-dimensional active gain regions with an adjustable band gap and quantum confinement. Here, we demonstrate lasing from GaAs-(InGaAs/AlGaAs) core-shell NWs with multiple InGaAs quantum wells (QW) and lasing wavelengths tunable from {\^a}0.8 to {\^a}1.1 μm. Our investigation emphasizes particularly the critical interplay between QW design, growth kinetics, and the control of InGaAs composition in the active region needed for effective tuning of the lasing wavelength. A low shell growth temperature and GaAs interlayers at the QW/barrier interfaces enable In molar fractions up to {\^a}25% without plastic strain relaxation or alloy intermixing in the QWs. Correlated scanning transmission electron microscopy, atom probe tomography, and confocal PL spectroscopy analyses illustrate the high sensitivity of the optically pumped lasing characteristics on microscopic properties, providing useful guidelines for other III-V-based NW laser systems.",

keywords = "InGaAs, Nanowire lasers, molecular beam epitaxy, monolithic III/V integration on Si, photoluminescence, quantum wells, scanning transmission electron microscopy",

author = "T. Stettner and A. Thurn and M. D{\"o}blinger and Hill, {M. O.} and J. Bissinger and P. Schmiedeke and S. Matich and T. Kostenbader and D. Ruhstorfer and H. Riedl and M. Kaniber and Lauhon, {L. J.} and Finley, {J. J.} and G. Koblm{\"u}ller",

note = "Publisher Copyright: {\textcopyright} 2018 American Chemical Society.",

year = "2018",

month = oct,

day = "10",

doi = "10.1021/acs.nanolett.8b02503",

language = "English",

volume = "18",

pages = "6292--6300",

journal = "Nano Letters",

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number = "10",

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Stettner, T, Thurn, A, Döblinger, M, Hill, MO, Bissinger, J, Schmiedeke, P, Matich, S, Kostenbader, T, Ruhstorfer, D, Riedl, H, Kaniber, M, Lauhon, LJ, Finley, JJ & Koblmüller, G 2018, 'Tuning Lasing Emission toward Long Wavelengths in GaAs-(In,Al)GaAs Core-Multishell Nanowires', Nano Letters, vol. 18, no. 10, pp. 6292-6300. https://doi.org/10.1021/acs.nanolett.8b02503

TY - JOUR

T1 - Tuning Lasing Emission toward Long Wavelengths in GaAs-(In,Al)GaAs Core-Multishell Nanowires

AU - Stettner, T.

AU - Thurn, A.

AU - Döblinger, M.

AU - Hill, M. O.

AU - Bissinger, J.

AU - Schmiedeke, P.

AU - Matich, S.

AU - Kostenbader, T.

AU - Ruhstorfer, D.

AU - Riedl, H.

AU - Kaniber, M.

AU - Lauhon, L. J.

AU - Finley, J. J.

AU - Koblmüller, G.

PY - 2018/10/10

Y1 - 2018/10/10

N2 - Semiconductor nanowire (NW) lasers are attractive as integrated on-chip coherent light sources with strong potential for applications in optical communication and sensing. Realizing lasers from individual bulk-type NWs with emission tunable from the near-infrared to the telecommunications spectral region is, however, challenging and requires low-dimensional active gain regions with an adjustable band gap and quantum confinement. Here, we demonstrate lasing from GaAs-(InGaAs/AlGaAs) core-shell NWs with multiple InGaAs quantum wells (QW) and lasing wavelengths tunable from â0.8 to â1.1 μm. Our investigation emphasizes particularly the critical interplay between QW design, growth kinetics, and the control of InGaAs composition in the active region needed for effective tuning of the lasing wavelength. A low shell growth temperature and GaAs interlayers at the QW/barrier interfaces enable In molar fractions up to â25% without plastic strain relaxation or alloy intermixing in the QWs. Correlated scanning transmission electron microscopy, atom probe tomography, and confocal PL spectroscopy analyses illustrate the high sensitivity of the optically pumped lasing characteristics on microscopic properties, providing useful guidelines for other III-V-based NW laser systems.

AB - Semiconductor nanowire (NW) lasers are attractive as integrated on-chip coherent light sources with strong potential for applications in optical communication and sensing. Realizing lasers from individual bulk-type NWs with emission tunable from the near-infrared to the telecommunications spectral region is, however, challenging and requires low-dimensional active gain regions with an adjustable band gap and quantum confinement. Here, we demonstrate lasing from GaAs-(InGaAs/AlGaAs) core-shell NWs with multiple InGaAs quantum wells (QW) and lasing wavelengths tunable from â0.8 to â1.1 μm. Our investigation emphasizes particularly the critical interplay between QW design, growth kinetics, and the control of InGaAs composition in the active region needed for effective tuning of the lasing wavelength. A low shell growth temperature and GaAs interlayers at the QW/barrier interfaces enable In molar fractions up to â25% without plastic strain relaxation or alloy intermixing in the QWs. Correlated scanning transmission electron microscopy, atom probe tomography, and confocal PL spectroscopy analyses illustrate the high sensitivity of the optically pumped lasing characteristics on microscopic properties, providing useful guidelines for other III-V-based NW laser systems.

KW - InGaAs

KW - Nanowire lasers

KW - molecular beam epitaxy

KW - monolithic III/V integration on Si

KW - photoluminescence

KW - quantum wells

KW - scanning transmission electron microscopy

UR - http://www.scopus.com/inward/record.url?scp=85053205731&partnerID=8YFLogxK

U2 - 10.1021/acs.nanolett.8b02503

DO - 10.1021/acs.nanolett.8b02503

M3 - Article

C2 - 30185051

AN - SCOPUS:85053205731

SN - 1530-6984

VL - 18

SP - 6292

EP - 6300

JO - Nano Letters

JF - Nano Letters

IS - 10

ER -

Tuning Lasing Emission toward Long Wavelengths in GaAs-(In,Al)GaAs Core-Multishell Nanowires

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