Triplet excitons in porous silicon and siloxene

M. S. Brandt; M. Stutzmann

doi:10.1016/0038-1098(94)00819-1

Triplet excitons in porous silicon and siloxene

M. S. Brandt, M. Stutzmann

TUM Emeriti of Excellence

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

46 Scopus citations

Abstract

The microscopic nature of the excited state responsible for the strong visible photoluminescence in porous silicon and siloxene is determined by optically detected magnetic resonance (ODMR). The observation of dipole-forbidden Δm = ±2-transitions proves that this excited state is a triplet exciton. The allowed Δm = ±2-transitions has the characteristic shape of a Pake-doublett due to spin-spin interaction, with a linewidth of ≈500 G independent of the photon energy monitored. These results are qualitatively incompatible with geometric quantum confinement, and point to a molecular origin of the radiative center.

Original language	English
Pages (from-to)	473-477
Number of pages	5
Journal	Solid State Communications
Volume	93
Issue number	6
DOIs	https://doi.org/10.1016/0038-1098(94)00819-1
State	Published - Feb 1995

Keywords

Electron paramagnetic resonance
Luminescence
Semiconductors

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10.1016/0038-1098(94)00819-1

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abstract = "The microscopic nature of the excited state responsible for the strong visible photoluminescence in porous silicon and siloxene is determined by optically detected magnetic resonance (ODMR). The observation of dipole-forbidden Δm = ±2-transitions proves that this excited state is a triplet exciton. The allowed Δm = ±2-transitions has the characteristic shape of a Pake-doublett due to spin-spin interaction, with a linewidth of ≈500 G independent of the photon energy monitored. These results are qualitatively incompatible with geometric quantum confinement, and point to a molecular origin of the radiative center.",

keywords = "Electron paramagnetic resonance, Luminescence, Semiconductors",

author = "Brandt, {M. S.} and M. Stutzmann",

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T1 - Triplet excitons in porous silicon and siloxene

AU - Brandt, M. S.

AU - Stutzmann, M.

PY - 1995/2

Y1 - 1995/2

N2 - The microscopic nature of the excited state responsible for the strong visible photoluminescence in porous silicon and siloxene is determined by optically detected magnetic resonance (ODMR). The observation of dipole-forbidden Δm = ±2-transitions proves that this excited state is a triplet exciton. The allowed Δm = ±2-transitions has the characteristic shape of a Pake-doublett due to spin-spin interaction, with a linewidth of ≈500 G independent of the photon energy monitored. These results are qualitatively incompatible with geometric quantum confinement, and point to a molecular origin of the radiative center.

AB - The microscopic nature of the excited state responsible for the strong visible photoluminescence in porous silicon and siloxene is determined by optically detected magnetic resonance (ODMR). The observation of dipole-forbidden Δm = ±2-transitions proves that this excited state is a triplet exciton. The allowed Δm = ±2-transitions has the characteristic shape of a Pake-doublett due to spin-spin interaction, with a linewidth of ≈500 G independent of the photon energy monitored. These results are qualitatively incompatible with geometric quantum confinement, and point to a molecular origin of the radiative center.

KW - Electron paramagnetic resonance

KW - Luminescence

KW - Semiconductors

UR - http://www.scopus.com/inward/record.url?scp=0029254884&partnerID=8YFLogxK

U2 - 10.1016/0038-1098(94)00819-1

DO - 10.1016/0038-1098(94)00819-1

M3 - Article

AN - SCOPUS:0029254884

SN - 0038-1098

VL - 93

SP - 473

EP - 477

JO - Solid State Communications

JF - Solid State Communications

IS - 6

ER -

Triplet excitons in porous silicon and siloxene

Abstract

Keywords

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