Triazidogallium and derivatives: New precursors to thin films and nanoparticles of GaN

R. A. Fischer; A. Miehr; E. Herdtweck; M. R. Mattner; O. Ambacher; T. Metzger; E. Born; S. Weinkauf; C. R. Pulham; S. Parsons

Triazidogallium and derivatives: New precursors to thin films and nanoparticles of GaN

R. A. Fischer, A. Miehr, E. Herdtweck, M. R. Mattner, O. Ambacher, T. Metzger, E. Born, S. Weinkauf, C. R. Pulham, S. Parsons

Heidelberg University

Research output: Contribution to journal › Article › peer-review

Abstract

The synthesis and properties of [Ga(N₃)₃], (1) and the related derivatives [(Do)(n)Ga(N₃)₃] (2a-d: Do = THF, NEt₃, NMe₃, quinuclidine, n = 1; 2e: Do = pyridine; n = 3), Li[(CH₃)Ga(N₃)₃] (3), [(N₃)₂Ga{(CH₂)₃NMe₂}] (4), [Cp(CO)₂-Fe Ga(N₃)₂(py)] (5), and [(CO)₄Co Ga(N₃)₂(NMe₃)] (6) are reported. Compounds 2e and 4 were characterized by single-crystal X-ray diffraction. The deposition of polycrystalline GaN thin films from 2a-e by solution methods (spin-on pyrolysis) and the solid-state pyrolysis of 1 to give GaN nanoparticles life described.

Original language	English
Pages (from-to)	1353-1358
Number of pages	6
Journal	Angewandte Chemie International Edition in English
Volume	35
Issue number	21
State	Published - 1996
Externally published	Yes

Keywords

azides
chemical vapor deposition
gallium compounds
materials science
thin films

Cite this

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title = "Triazidogallium and derivatives: New precursors to thin films and nanoparticles of GaN",

abstract = "The synthesis and properties of [Ga(N3)3], (1) and the related derivatives [(Do)(n)Ga(N3)3] (2a-d: Do = THF, NEt3, NMe3, quinuclidine, n = 1; 2e: Do = pyridine; n = 3), Li[(CH3)Ga(N3)3] (3), [(N3)2Ga{(CH2)3NMe2}] (4), [Cp(CO)2-Fe Ga(N3)2(py)] (5), and [(CO)4Co Ga(N3)2(NMe3)] (6) are reported. Compounds 2e and 4 were characterized by single-crystal X-ray diffraction. The deposition of polycrystalline GaN thin films from 2a-e by solution methods (spin-on pyrolysis) and the solid-state pyrolysis of 1 to give GaN nanoparticles life described.",

keywords = "azides, chemical vapor deposition, gallium compounds, materials science, thin films",

author = "Fischer, {R. A.} and A. Miehr and E. Herdtweck and Mattner, {M. R.} and O. Ambacher and T. Metzger and E. Born and S. Weinkauf and Pulham, {C. R.} and S. Parsons",

year = "1996",

language = "English",

volume = "35",

pages = "1353--1358",

journal = "Angewandte Chemie International Edition in English",

issn = "0570-0833",

publisher = "John Wiley and Sons Ltd",

number = "21",

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TY - JOUR

T1 - Triazidogallium and derivatives

T2 - New precursors to thin films and nanoparticles of GaN

AU - Fischer, R. A.

AU - Miehr, A.

AU - Herdtweck, E.

AU - Mattner, M. R.

AU - Ambacher, O.

AU - Metzger, T.

AU - Born, E.

AU - Weinkauf, S.

AU - Pulham, C. R.

AU - Parsons, S.

PY - 1996

Y1 - 1996

N2 - The synthesis and properties of [Ga(N3)3], (1) and the related derivatives [(Do)(n)Ga(N3)3] (2a-d: Do = THF, NEt3, NMe3, quinuclidine, n = 1; 2e: Do = pyridine; n = 3), Li[(CH3)Ga(N3)3] (3), [(N3)2Ga{(CH2)3NMe2}] (4), [Cp(CO)2-Fe Ga(N3)2(py)] (5), and [(CO)4Co Ga(N3)2(NMe3)] (6) are reported. Compounds 2e and 4 were characterized by single-crystal X-ray diffraction. The deposition of polycrystalline GaN thin films from 2a-e by solution methods (spin-on pyrolysis) and the solid-state pyrolysis of 1 to give GaN nanoparticles life described.

AB - The synthesis and properties of [Ga(N3)3], (1) and the related derivatives [(Do)(n)Ga(N3)3] (2a-d: Do = THF, NEt3, NMe3, quinuclidine, n = 1; 2e: Do = pyridine; n = 3), Li[(CH3)Ga(N3)3] (3), [(N3)2Ga{(CH2)3NMe2}] (4), [Cp(CO)2-Fe Ga(N3)2(py)] (5), and [(CO)4Co Ga(N3)2(NMe3)] (6) are reported. Compounds 2e and 4 were characterized by single-crystal X-ray diffraction. The deposition of polycrystalline GaN thin films from 2a-e by solution methods (spin-on pyrolysis) and the solid-state pyrolysis of 1 to give GaN nanoparticles life described.

KW - azides

KW - chemical vapor deposition

KW - gallium compounds

KW - materials science

KW - thin films

UR - http://www.scopus.com/inward/record.url?scp=0030446854&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0030446854

SN - 0570-0833

VL - 35

SP - 1353

EP - 1358

JO - Angewandte Chemie International Edition in English

JF - Angewandte Chemie International Edition in English

IS - 21

ER -

Triazidogallium and derivatives: New precursors to thin films and nanoparticles of GaN

Abstract

Keywords

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