TY - JOUR
T1 - Triazidogallium and derivatives
T2 - New precursors to thin films and nanoparticles of GaN
AU - Fischer, Roland A.
AU - Miehr, Alexander
AU - Herdtweck, Eberhardt
AU - Mattner, Michael R.
AU - Ambacher, Oliver
AU - Metzger, Thomas
AU - Born, Eberhard
AU - Weinkauf, Sevil
AU - Pulham, Colin R.
AU - Parsons, Simon
PY - 1996
Y1 - 1996
N2 - The synthesis and properties of [Ga(N3)3] ∞ (1) and the related derivatives [(Do)nGa(N 3)3] (2a-d: Do = THF, NEt3, NMe3, quinuclidine, n = 1; 2e: Do = pyridine; n = 3), Li[(CH3)Ga(N 3)3] (3), [(N3)2Ga{(CH 2)3NMe2}] (4), [Cp(CO)2-Fe-Ga(N 3)2(py)] (5), and [(CO)4Co-Ga(N 3)2(NMe3)] (6) are reported. Compounds 2e and 4 were characterized by single-crystal X-ray diffraction. The deposition of polycrystalline GaN thin films from 2a-e by solution methods (spin-on pyrolysis) and the solid-state pyrolysis of 1 to give GaN nanoparticles are described.
AB - The synthesis and properties of [Ga(N3)3] ∞ (1) and the related derivatives [(Do)nGa(N 3)3] (2a-d: Do = THF, NEt3, NMe3, quinuclidine, n = 1; 2e: Do = pyridine; n = 3), Li[(CH3)Ga(N 3)3] (3), [(N3)2Ga{(CH 2)3NMe2}] (4), [Cp(CO)2-Fe-Ga(N 3)2(py)] (5), and [(CO)4Co-Ga(N 3)2(NMe3)] (6) are reported. Compounds 2e and 4 were characterized by single-crystal X-ray diffraction. The deposition of polycrystalline GaN thin films from 2a-e by solution methods (spin-on pyrolysis) and the solid-state pyrolysis of 1 to give GaN nanoparticles are described.
KW - Azides
KW - Chemical vapor deposition
KW - Gallium compounds
KW - Materials science
KW - Thin films
UR - http://www.scopus.com/inward/record.url?scp=0001504825&partnerID=8YFLogxK
U2 - 10.1002/chem.19960021104
DO - 10.1002/chem.19960021104
M3 - Article
AN - SCOPUS:0001504825
SN - 0947-6539
VL - 2
SP - 1353
EP - 1358
JO - Chemistry - A European Journal
JF - Chemistry - A European Journal
IS - 11
ER -