TY - GEN
T1 - Traps Based Reliability Barrier on Performance and Revealing Early Ageing in Negative Capacitance FET
AU - Gupta, Aniket
AU - Bajpai, Govind
AU - Singhal, Priyanshi
AU - Bagga, Navjeet
AU - Prakash, Om
AU - Banchhor, Shashank
AU - Amrouch, Hussam
AU - Chauhan, Nitanshu
N1 - Publisher Copyright:
© 2021 IEEE.
PY - 2021/3
Y1 - 2021/3
N2 - Trap charges influence the reliability of semiconductor devices, which is an essential measure of performance evaluation especially for high-performance circuits and safety-critical applications. In this paper for the first time, the individual and combined impact of Si-SiO2 interface traps and Ferroelectric (FE) bulk traps on the performance of the Negative Capacitance (NC) FDSOI FET have been investigated. Our investigation shows: 1) The high interface electric field and variation of trap induced polarization causes early aging effect; 2) Performance degradation due to FE bulk traps that change the vertical field distribution through polarization variation in the FE oxide layer of NC-pFDSOI FET; 3) The combined effect of interface traps and the bulk traps predominantly degrades the performance of NC FDSOI FET as compared to the baseline pFDSOI FET. Our results using well-calibrated TCAD models reveal that the reliability barrier due to joint impact of interface traps and bulk traps, limits the low power performance of NCFET.
AB - Trap charges influence the reliability of semiconductor devices, which is an essential measure of performance evaluation especially for high-performance circuits and safety-critical applications. In this paper for the first time, the individual and combined impact of Si-SiO2 interface traps and Ferroelectric (FE) bulk traps on the performance of the Negative Capacitance (NC) FDSOI FET have been investigated. Our investigation shows: 1) The high interface electric field and variation of trap induced polarization causes early aging effect; 2) Performance degradation due to FE bulk traps that change the vertical field distribution through polarization variation in the FE oxide layer of NC-pFDSOI FET; 3) The combined effect of interface traps and the bulk traps predominantly degrades the performance of NC FDSOI FET as compared to the baseline pFDSOI FET. Our results using well-calibrated TCAD models reveal that the reliability barrier due to joint impact of interface traps and bulk traps, limits the low power performance of NCFET.
KW - Bulk traps
KW - ferroelectric
KW - interface traps
KW - negative capacitance
KW - polarization switching
UR - http://www.scopus.com/inward/record.url?scp=85105578178&partnerID=8YFLogxK
U2 - 10.1109/IRPS46558.2021.9405185
DO - 10.1109/IRPS46558.2021.9405185
M3 - Conference contribution
AN - SCOPUS:85105578178
T3 - IEEE International Reliability Physics Symposium Proceedings
BT - 2021 IEEE International Reliability Physics Symposium, IRPS 2021 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2021 IEEE International Reliability Physics Symposium, IRPS 2021
Y2 - 21 March 2021 through 24 March 2021
ER -