Trapping mechanisms in negative bias temperature stressed p-MOSFETs

Christian Schlünder, Ralf Brederlow, Peter Wieczorek, Claus Dahl, Jürgen Holz, Michael Röhner, Sylvia Kessel, Volker Herold, Karl Goser, Werner Weber, Roland Thewes

Research output: Contribution to journalConference articlepeer-review

29 Scopus citations


Device parameter degradation of p-MOSFETs after Negative Bias Temperature Stress (NBTS) and the related charge trapping mechanisms are investigated in detail. Applying specific annealing experiments to NBT-stressed transistors, the influence of stress-induced oxide charge build-up and interface state generation on the degradation of the electrical parameters is evaluated. It is found, that hole trapping significantly contributes to the NBTS-induced Vt shift. Furthermore, experimental results of the hot-carrier behavior of virgin and NBT-stressed devices demonstrate that only weak correlations between these types of stress and the involved degradation mechanisms exist, which is important in applications with alternating stress situations.

Original languageEnglish
Pages (from-to)821-826
Number of pages6
JournalMicroelectronics Reliability
Issue number6-7
StatePublished - 1999
Externally publishedYes
EventProceedings of the 1999 10th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 99) - Arcachon, FR
Duration: 5 Oct 19998 Oct 1999


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