Trap-limited hydrogen diffusion in doped silicon

Hydrogen depth profiles in highly doped p-type silicon are obtained from the analysis of infrared reflectance spectra of H-passivated samples. From these profiles, H-diffusion coefficients are calculated for different temperatures and dopant concentrations. The results are explained with the assumption that hydrogen diffusion is limited by trapping at the acceptor sites. A binding energy of 0.6 eV is found for B-H complexes, in agreement with previous ab initio calculations.